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AS6C1008-55TINL备选型号: IS62WV2568BLL-55TLI

AS6C1008-55TINL

Alliance Memory, Inc.

SRAM 1Mb, 2.7V-5.5V, 55ns 128K x 8 Asynch SRAM

8 Weeks
表面贴装
32-TFSOP (0.724, 18.40mm Width)
YES
32
Volatile
-40°C~85°C TA
Tray
2006
yes
活跃
3 (168 Hours)
32
2.7V~5.5V
DUAL
未说明
1
3V
0.5mm
未说明
5.5V
2.7V
1Mb 128K x 8
SRAM
Parallel
128KX8
8
55ns
1048576 bit
55 ns
18.4mm
1.2mm
8mm
ROHS3 Compliant
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
IS62WV2568BLL-55TLI

ISSI, Integrated Silicon Solution Inc

IC SRAM 2M PARALLEL 32TSOP I

8 Weeks
表面贴装
32-TFSOP (0.724, 18.40mm Width)
-
32
Volatile
-40°C~85°C TA
Tray
-
yes
活跃
3 (168 Hours)
32
2.5V~3.6V
DUAL
260
1
3V
0.5mm
40
3.6V
2.5V
2Mb 256K x 8
SRAM
Parallel
256KX8
8
55ns
-
55 ns
-
-
-
ROHS3 Compliant
表面贴装
e3
Matte Tin (Sn) - annealed
32
3.3V
1
15mA
3-STATE
18b
2 Mb
18MHz
COMMON
Asynchronous
8b
1V
85°C
1.2mm
无
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图片	产品型号	品牌	分类	封装	描述	对比
	AS6C2008A-55TIN	Alliance Memory, Inc.	存储器	32-TFSOP (0.724, 18.40mm Width)	IC SRAM 2M PARALLEL 32TSOP I	对比
	AS6C2008-55TIN	Alliance Memory, Inc.	存储器	32-TFSOP (0.724, 18.40mm Width)	SRAM Chip Async Single 3V 2M-Bit 256K x 8 55ns 32-Pin TSOP-I	对比
	IS62WV2568BLL-55TLI	ISSI, Integrated Silicon Solution Inc	存储器	32-TFSOP (0.724, 18.40mm Width)	IC SRAM 2M PARALLEL 32TSOP I	对比