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AS6C1616-55TIN备选型号: CY62147EV30LL-55ZSXE

AS6C1616-55TIN

Alliance Memory, Inc.

SRAM 16M, 2.7-3.6V, 55ns 1024K x 16 Asyn SRAM

8 Weeks
表面贴装
表面贴装
48-TFSOP (0.724, 18.40mm Width)
48
Volatile
-40°C~85°C TA
Tray
2007
yes
活跃
3 (168 Hours)
48
2.7V~3.6V
DUAL
1
3V
0.5mm
1MHz
48
3V
3.6V
2.7V
16Mb 1M x 16
1
SRAM
Parallel
55ns
20b
16 Mb
55 ns
1.05mm
18.5mm
12.1mm
无
ROHS3 Compliant
无铅
-
-
-
-
-
-
-
-
-
-
-
CY62147EV30LL-55ZSXE

Cypress Semiconductor Corp

IC SRAM 4M PARALLEL 44TSOP II

-
表面贴装
表面贴装
44-TSOP (0.400, 10.16mm Width)
44
Volatile
-40°C~125°C TA
Tube
2001
yes
Discontinued
3 (168 Hours)
44
2.2V~3.6V
DUAL
1
3V
0.8mm
1MHz
44
3V
3.6V
2.2V
4Mb 256K x 16
1
SRAM
Parallel
55ns
18b
4 Mb
55 ns
1.044mm
18.52mm
10.262mm
无
ROHS3 Compliant
无铅
MoBL®
e4
Nickel/Palladium/Gold (Ni/Pd/Au)
260
20
CY62147
25mA
3-STATE
COMMON
Asynchronous
16b
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集成电路（IC）相关产品

图片	产品型号	品牌	分类	封装	描述	对比
	CY62167EV30LL-45ZXI	Cypress Semiconductor Corp	存储器	48-TFSOP (0.724, 18.40mm Width)	SRAM Chip Async Single 3V 16M-bit 2M/1M x 8/16-bit 45ns 48-Pin TSOP-I Tray	对比
	CY62147EV30LL-55ZSXE	Cypress Semiconductor Corp	存储器	44-TSOP (0.400, 10.16mm Width)	IC SRAM 4M PARALLEL 44TSOP II	对比
	R1LV1616RSA-7SI#B0	Renesas Electronics America	存储器	48-TFSOP (0.724, 18.40mm Width)	SRAM Chip Async Single 3V 16M-bit 2M/1M x 8/16-bit 70ns 48-Pin TSOP-I	对比