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AS6C2008-55SIN备选型号: AS6C4008A-55SIN

AS6C2008-55SIN

Alliance Memory, Inc.

SRAM Chip Async Single 3V 2M-Bit 256K x 8 55ns 32-Pin SOP

8 Weeks
表面贴装
32-SOIC (0.445, 11.30mm Width)
YES
32
Volatile
-40°C~85°C TA
Tube
2006
yes
活跃
3 (168 Hours)
32
2.7V~3.6V
DUAL
260
1
3V
40
32
不合格
3V
3.6V
2.7V
2Mb 256K x 8
1
0.035mA
SRAM
Parallel
256KX8
3-STATE
8
55ns
18b
2 Mb
55 ns
COMMON
2.997mm
ROHS3 Compliant
无铅
-
-
-
-
AS6C4008A-55SIN

Alliance Memory, Inc.

SRAM 4M, 2.7-5.5V, 55ns 512K x 8 Asynch SRAM

8 Weeks
表面贴装
32-SOIC (0.445, 11.30mm Width)
YES
32
Volatile
-40°C~85°C TA
Tube
2001
yes
活跃
3 (168 Hours)
32
2.7V~3.6V
DUAL
260
1
3V
40
32
-
3V
3.6V
2.7V
4Mb 512K x 8
1
-
SRAM
Parallel
-
-
8
55ns
19b
4 Mb
55 ns
-
3.048mm
ROHS3 Compliant
-
e3/e6
PURE MATTE TIN/TIN BISMUTH
LG-MAX
20.75mm
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图片	产品型号	品牌	分类	封装	描述	对比
	R1LV0108ESN-5SR#B0	Renesas Electronics America	存储器	32-SOIC (0.450, 11.40mm Width)	SRAM Chip Async Single 3V 1M-bit 128K x 8 55ns 32-Pin SOP Tube	对比
	R1LV0108ESN-5SI#B0	Renesas Electronics America	存储器	32-SOIC (0.450, 11.40mm Width)	SRAM Chip Async Single 3V 1M-bit 128K x 8 55ns 32-Pin SOP Tube	对比
	AS6C4008A-55SIN	Alliance Memory, Inc.	存储器	32-SOIC (0.445, 11.30mm Width)	SRAM 4M, 2.7-5.5V, 55ns 512K x 8 Asynch SRAM	对比