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AS6C2008A-55BIN备选型号: IS61WV6416DBLL-10BLI

AS6C2008A-55BIN

Alliance Memory, Inc.

IC SRAM 2M PARALLEL 36TFBGA

8 Weeks
表面贴装
36-TFBGA
Volatile
-40°C~85°C TA
Tray
2007
yes
活跃
3 (168 Hours)
2.7V~5.5V
未说明
unknown
未说明
2Mb 256K x 8
SRAM
Parallel
55ns
ROHS3 Compliant
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
IS61WV6416DBLL-10BLI

ISSI, Integrated Silicon Solution Inc

SRAM Chip Async Single 2.5V/3.3V 1M-bit 64K x 16 10ns 48-Pin Mini-FBGA

8 Weeks
表面贴装
48-TFBGA
Volatile
-40°C~85°C TA
Tray
-
-
活跃
3 (168 Hours)
2.4V~3.6V
-
-
-
1Mb 64K x 16
SRAM
Parallel
10ns
ROHS3 Compliant
YES
48
48
BOTTOM
1
3V
0.75mm
48
不合格
3.6V
2.5/3.3V
2.4V
1
55mA
3-STATE
16
16b
1 Mb
0.000055A
COMMON
Asynchronous
16b
2V
8mm
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图片	产品型号	品牌	分类	封装	描述	对比
	IS42S16400J-6BLI	ISSI, Integrated Silicon Solution Inc	存储器	54-TFBGA	IC DRAM 64M PARALLEL 54TFBGA	对比
	IS62WV12816BLL-55BLI	ISSI, Integrated Silicon Solution Inc	存储器	48-TFBGA	IC SRAM 2M PARALLEL 48MINIBGA	对比
	AS6C1008-55BIN	Alliance Memory, Inc.	存储器	36-TFBGA	SRAM Chip Async Single 3V 1M-Bit 128K x 8 55ns	对比