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AS6C4008-55BINTR备选型号: IS61WV5128EDBLL-10BLI

AS6C4008-55BINTR

Alliance Memory, Inc.

SRAM 4M, 2.7-5.5V, 55ns 512K x 8 Asynch SRAM

8 Weeks
表面贴装
36-TFBGA
YES
36
Volatile
-40°C~85°C TA
Tape & Reel (TR)
2009
活跃
3 (168 Hours)
36
2.7V~5.5V
BOTTOM
0.75mm
不合格
3/5V
4Mb 512K x 8
SRAM
Parallel
512KX8
3-STATE
8
55ns
0.00003A
4194304 bit
55 ns
COMMON
1.5V
ROHS3 Compliant
-
-
-
-
-
-
-
-
-
-
-
-
-
-
IS61WV5128EDBLL-10BLI

ISSI, Integrated Silicon Solution Inc

4Mb, high-Speed/low Power, async With Ecc, 512K X 8, 10Ns/2.4V-3.6V, 36 Ball Mbga (6X8 Mm), Leadfree

8 Weeks
表面贴装
36-TFBGA
YES
36
Volatile
-40°C~85°C TA
Tray
-
活跃
3 (168 Hours)
36
2.4V~3.6V
BOTTOM
0.75mm
-
-
4Mb 512K x 8
SRAM
Parallel
-
-
8
10ns
-
-
-
-
-
ROHS3 Compliant
未说明
1
3V
未说明
36
3.6V
2.4V
1
35mA
19b
4 Mb
Asynchronous
8b
8mm
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集成电路（IC）相关产品

图片	产品型号	品牌	分类	封装	描述	对比
	AS6C4008A-55BIN	Alliance Memory, Inc.	存储器	36-TFBGA	SRAM 4M, 2.7-5.5V, 55ns 512K x 8 Asynch SRAM	对比
	AS6C2008-55BIN	Alliance Memory, Inc.	存储器	36-TFBGA	SRAM Chip Async Single 3V 2M-Bit 256K x 8 55ns 36-Pin TFBGA	对比
	AS6C1008-55BIN	Alliance Memory, Inc.	存储器	36-TFBGA	SRAM Chip Async Single 3V 1M-Bit 128K x 8 55ns	对比