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AS6C4008-55TINTR备选型号: AS6C4008A-55TIN

AS6C4008-55TINTR

Alliance Memory, Inc.

SRAM 4M, 2.7-5.5V, 55ns 512K x 8 Asynch SRAM

8 Weeks
表面贴装
32-TFSOP (0.724, 18.40mm Width)
YES
32
Volatile
-40°C~85°C TA
Tape & Reel (TR)
2009
活跃
3 (168 Hours)
32
2.7V~5.5V
DUAL
0.5mm
不合格
3/5V
4Mb 512K x 8
SRAM
Parallel
512KX8
3-STATE
8
55ns
4 Mb
0.00003A
55 ns
COMMON
1.5V
ROHS3 Compliant
无铅
-
-
-
-
-
-
-
-
-
-
-
-
-
AS6C4008A-55TIN

Alliance Memory, Inc.

SRAM 4M, 2.7-5.5V, 55ns 512K x 8 Asynch SRAM

8 Weeks
表面贴装
32-TFSOP (0.724, 18.40mm Width)
YES
32
Volatile
-40°C~85°C TA
Tray
2012
活跃
3 (168 Hours)
32
2.7V~3.6V
DUAL
0.5mm
-
-
4Mb 512K x 8
SRAM
Parallel
-
-
8
55ns
4 Mb
-
55 ns
-
-
ROHS3 Compliant
-
e3/e6
yes
PURE MATTE TIN/TIN BISMUTH
260
1
3V
40
32
3V
3.6V
2.7V
1
19b
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	IS62WV5128BLL-55TLI	ISSI, Integrated Silicon Solution Inc	存储器	32-TFSOP (0.724, 18.40mm Width)	IC SRAM 4M PARALLEL 32TSOP I	对比
	IS62C5128BL-45TLI	ISSI, Integrated Silicon Solution Inc	存储器	32-SOIC (0.400, 10.16mm Width)	SRAM Chip Async Single 5V 4M-bit 512K x 8 45ns 32-Pin TSOP-II	对比
	AS6C4008A-55TIN	Alliance Memory, Inc.	存储器	32-TFSOP (0.724, 18.40mm Width)	SRAM 4M, 2.7-5.5V, 55ns 512K x 8 Asynch SRAM	对比