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AS6C4008A-55STIN备选型号: IS62WV5128BLL-55T2LI-TR

AS6C4008A-55STIN

Alliance Memory, Inc.

SRAM 4M, 2.7-5.5V, 55ns 512K x 8 Asynch SRAM

8 Weeks
表面贴装
32-LFSOP (0.465, 11.80mm Width)
32
Volatile
-40°C~85°C TA
Tray
2012
活跃
3 (168 Hours)
2.7V~3.6V
3V
4Mb 512K x 8
1
SRAM
Parallel
55ns
19b
4 Mb
ROHS3 Compliant
无铅
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
IS62WV5128BLL-55T2LI-TR

ISSI, Integrated Silicon Solution Inc

SRAM Chip Async Single 3.3V 4M-bit 512K x 8 55ns 32-Pin TSOP-II T/R

8 Weeks
表面贴装
32-SOIC (0.400, 10.16mm Width)
32
Volatile
-40°C~85°C TA
Tape & Reel (TR)
-
活跃
2 (1 Year)
2.5V~3.6V
3.3V
4Mb 512K x 8
1
SRAM
Parallel
55ns
19b
4 Mb
ROHS3 Compliant
-
表面贴装
e3
yes
32
Matte Tin (Sn)
DUAL
260
1
2.8V
40
32
3.6V
2.5V
45mA
8
55 ns
Asynchronous
8b
20.95mm
无
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集成电路（IC）相关产品

图片	产品型号	品牌	分类	封装	描述	对比
	IS62WV5128BLL-55TLI	ISSI, Integrated Silicon Solution Inc	存储器	32-TFSOP (0.724, 18.40mm Width)	IC SRAM 4M PARALLEL 32TSOP I	对比
	IS62WV5128BLL-55T2LI-TR	ISSI, Integrated Silicon Solution Inc	存储器	32-SOIC (0.400, 10.16mm Width)	SRAM Chip Async Single 3.3V 4M-bit 512K x 8 55ns 32-Pin TSOP-II T/R	对比