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AS6C4016-55BIN备选型号: IS61WV25616BLL-10BLI

AS6C4016-55BIN

Alliance Memory, Inc.

SRAM Chip Async Single 3V 4M-Bit 256K x 16 55ns 48-Pin TFBGA

8 Weeks
表面贴装
48-LFBGA
YES
48
Volatile
-40°C~85°C TA
Tray
2008
yes
活跃
3 (168 Hours)
48
3V
BOTTOM
260
1
0.75mm
40
3/5V
4Mb 256K x 16
1
0.06mA
SRAM
Parallel
3-STATE
16
55ns
18b
4 Mb
0.00003A
55 ns
COMMON
2V
5.5V
2.7V
8mm
Unknown
无
ROHS3 Compliant
无铅
-
-
-
-
-
-
-
IS61WV25616BLL-10BLI

ISSI, Integrated Silicon Solution Inc

IC SRAM 4M PARALLEL 48MINIBGA

8 Weeks
表面贴装
48-TFBGA
YES
48
Volatile
-40°C~85°C TA
Tray
-
yes
活跃
3 (168 Hours)
48
3.3V
BOTTOM
260
1
0.75mm
40
2.5/3.3V
4Mb 256K x 16
1
-
SRAM
Parallel
3-STATE
-
10ns
18b
4 Mb
0.009A
-
COMMON
2V
3.6V
2.4V
8.1mm
-
无
ROHS3 Compliant
-
45mA
e1
Tin/Silver/Copper (Sn/Ag/Cu)
Asynchronous
16b
900μm
6.1mm
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图片	产品型号	品牌	分类	封装	描述	对比
	AS6C4008A-55BIN	Alliance Memory, Inc.	存储器	36-TFBGA	SRAM 4M, 2.7-5.5V, 55ns 512K x 8 Asynch SRAM	对比
	IS61WV25616BLL-10BLI	ISSI, Integrated Silicon Solution Inc	存储器	48-TFBGA	IC SRAM 4M PARALLEL 48MINIBGA	对比
	AS6C4008-55BIN	Alliance Memory, Inc.	存储器	36-TFBGA	SRAM Chip Async Single 3V 4M-Bit 512K x 8 55ns 36-Pin TFBGA	对比