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AS7C1026B-20JCN备选型号: 71016S20PHGI

AS7C1026B-20JCN

Alliance Memory, Inc.

SRAM 1M, 5V, 20ns FAST 64K x 16 Asynch SRAM

8 Weeks
表面贴装
44-BSOJ (0.400, 10.16mm Width)
44
44-SOJ
Volatile
0°C~70°C TA
Tube
1996
活跃
3 (168 Hours)
70°C
0°C
4.5V~5.5V
5V
Parallel
5.5V
4.5V
1Mb 64K x 16
1
20ns
SRAM
Parallel
20ns
16b
1 Mb
无
ROHS3 Compliant
无铅
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
71016S20PHGI

Integrated Device Technology (IDT)

SRAM 64Kx16 ASYNCHRONOUS 5.0V STATIC RAM

12 Weeks
-
TSOP
44
-
RAM, SDR, SRAM - Asynchronous
-
-
2007
活跃
3 (168 Hours)
85°C
-40°C
-
5V
Parallel
5.5V
4.5V
128kB
1
20 ns
-
-
-
16b
1 Mb
无
符合RoHS标准
无铅
表面贴装
e3
yes
44
Matte Tin (Sn) - annealed
DUAL
鸥翼
260
1
5V
0.8mm
30
44
5V
INDUSTRIAL
170mA
3-STATE
COMMON
Asynchronous
16b
18.41mm
10.16mm
1mm
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图片	产品型号	品牌	分类	封装	描述	对比
	71016S20PHG	Integrated Device Technology (IDT)	存储器	TSOP	SRAM Chip Async Single 5V 1M-Bit 64K x 16 20ns 44-Pin TSOP-II Tray	对比
	71016S20YG	Integrated Device Technology (IDT)	存储器		SRAM 64Kx16 ASYNCHRONOUS 5.0V STATIC RAM	对比
	71016S20PHGI	Integrated Device Technology (IDT)	存储器	TSOP	SRAM 64Kx16 ASYNCHRONOUS 5.0V STATIC RAM	对比