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AS7C31026B-20JCNTR备选型号: 71V016SA20YG8

AS7C31026B-20JCNTR

Alliance Memory, Inc.

SRAM 1M, 3.3V, 20ns, FAST 64K x 16 Asynch SRAM

8 Weeks
表面贴装
44-BSOJ (0.400, 10.16mm Width)
YES
44
Volatile
0°C~70°C TA
Tape & Reel (TR)
1996
yes
活跃
3 (168 Hours)
44
3.3V
DUAL
未说明
1
1.27mm
未说明
1Mb 64K x 16
SRAM
Parallel
64KX16
16
20ns
1 Mb
20 ns
3.6V
3V
28.575mm
3.7592mm
10.16mm
ROHS3 Compliant
无铅
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
71V016SA20YG8

Integrated Device Technology (IDT)

SRAM Chip Async Single 3.3V 1M-Bit 64K x 16 20ns 44-Pin SOJ T/R

12 Weeks
-
-
-
44
RAM, SDR, SRAM - Asynchronous
-
Tape & Reel
2011
yes
活跃
3 (168 Hours)
44
3.3V
DUAL
260
1
-
-
128kB
-
-
-
-
-
1 Mb
-
3.6V
3V
28.6mm
3.683mm
10.2mm
符合RoHS标准
无铅
表面贴装
120mA
e3
Matte Tin (Sn) - annealed
70°C
0°C
J BEND
COMMERCIAL
Parallel
1
20 ns
3-STATE
16b
COMMON
Asynchronous
16b
3V
2.9mm
无
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图片	产品型号	品牌	分类	封装	描述	对比
	71V016SA20YG8	Integrated Device Technology (IDT)	存储器		SRAM Chip Async Single 3.3V 1M-Bit 64K x 16 20ns 44-Pin SOJ T/R	对比
	71V016SA20PHG	Integrated Device Technology (IDT)	存储器	TSOP	SRAM 64Kx16 ASYNCHRONOUS 3.3V STATIC RAM	对比
	71V016SA20PHGI	Integrated Device Technology (IDT)	存储器	TSOP	SRAM Chip Async Single 3.3V 1M-Bit 64K x 16 20ns 44-Pin TSOP-II Tube/Tray	对比