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AS7C32096A-15TIN备选型号: 71V416L15PHGI

AS7C32096A-15TIN

Alliance Memory, Inc.

SRAM 2M, 3.3V, 15ns, FAST 256K x 8 Asynch SRAM

8 Weeks
表面贴装
44-TSOP (0.400, 10.16mm Width)
44-TSOP2
Volatile
-40°C~85°C TA
Tray
2001
活跃
3 (168 Hours)
85°C
-40°C
3V~3.6V
Parallel
3.6V
3V
2Mb 256K x 8
15ns
SRAM
Parallel
15ns
ROHS3 Compliant
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71V416L15PHGI

Integrated Device Technology (IDT)

SRAM 256Kx16 ASYNCHRONOUS 3.3V CMOS SRAM

12 Weeks
-
TSOP
-
RAM, SDR, SRAM - Asynchronous
-
-
2013
活跃
3 (168 Hours)
85°C
-40°C
-
Parallel
3.6V
3V
512kB
15 ns
-
-
-
符合RoHS标准
表面贴装
44
e3
yes
44
Matte Tin (Sn) - annealed
DUAL
鸥翼
260
1
3.3V
0.8mm
30
44
3.3V
INDUSTRIAL
1
160mA
3-STATE
18b
4 Mb
COMMON
Asynchronous
16b
3V
18.41mm
10.16mm
1mm
无
无铅
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	71V424S15PHG	Integrated Device Technology (IDT)	存储器	TSOP	SRAM 512Kx8 ASYNCHRONOUS 3.3V CMOS SRAM	对比
	71V416L15PHGI	Integrated Device Technology (IDT)	存储器	TSOP	SRAM 256Kx16 ASYNCHRONOUS 3.3V CMOS SRAM	对比
	71V416S15PHGI	Integrated Device Technology (IDT)	存储器	TSOP	SRAM 256Kx16 ASYNCHRONOUS 3.3V CMOS SRAM	对比