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AS7C32096A-20TIN备选型号: 71V016SA20PHGI

AS7C32096A-20TIN

Alliance Memory, Inc.

SRAM 2M, 3.3V, 20ns, FAST 256K x 8 Asynch SRAM

8 Weeks
表面贴装
44-TSOP (0.400, 10.16mm Width)
44-TSOP2
Volatile
-40°C~85°C TA
Tray
2001
活跃
3 (168 Hours)
85°C
-40°C
3V~3.6V
Parallel
3.6V
3V
2Mb 256K x 8
20ns
SRAM
Parallel
20ns
ROHS3 Compliant
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
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-
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-
71V016SA20PHGI

Integrated Device Technology (IDT)

SRAM Chip Async Single 3.3V 1M-Bit 64K x 16 20ns 44-Pin TSOP-II Tube/Tray

12 Weeks
-
TSOP
-
RAM, SDR, SRAM - Asynchronous
-
-
2011
活跃
3 (168 Hours)
85°C
-40°C
-
Parallel
3.6V
3V
128kB
20 ns
-
-
-
符合RoHS标准
表面贴装
44
e3
yes
44
Matte Tin (Sn) - annealed
DUAL
鸥翼
260
1
3.3V
0.8mm
30
44
3.3V
INDUSTRIAL
1
120mA
3-STATE
16b
1 Mb
COMMON
Asynchronous
16b
3V
18.41mm
10.16mm
1mm
无
无铅
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集成电路（IC）相关产品

图片	产品型号	品牌	分类	封装	描述	对比
	AS7C34096A-20TINTR	Alliance Memory, Inc.	存储器	44-TSOP (0.400, 10.16mm Width)	SRAM 4M, 3.3V, 20ns, FAST 512K x 8 Asynch SRAM	对比
	71V016SA20PHG	Integrated Device Technology (IDT)	存储器	TSOP	SRAM 64Kx16 ASYNCHRONOUS 3.3V STATIC RAM	对比
	71V016SA20PHGI	Integrated Device Technology (IDT)	存储器	TSOP	SRAM Chip Async Single 3.3V 1M-Bit 64K x 16 20ns 44-Pin TSOP-II Tube/Tray	对比