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AS7C32098A-20TIN备选型号: 71V016SA20PHGI

AS7C32098A-20TIN

Alliance Memory, Inc.

SRAM 2M, 3.3V, 20ns, FAST 128K x 16 Asyn SRAM

8 Weeks
表面贴装
44-TSOP (0.400, 10.16mm Width)
YES
Volatile
-40°C~85°C TA
Tray
2001
e3/e6
yes
活跃
3 (168 Hours)
44
3A991.B.2.A
MATTE TIN/TIN BISMUTH
8542.32.00.41
3V~3.6V
DUAL
260
1
3.3V
0.8mm
40
44
R-PDSO-G44
不合格
3.6V
3.3V
3V
2Mb 128K x 16
SRAM
Parallel
128KX16
3-STATE
16
20ns
0.008A
2097152 bit
20 ns
COMMON
3V
18.415mm
1.2mm
10.16mm
ROHS3 Compliant
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
71V016SA20PHGI

Integrated Device Technology (IDT)

SRAM Chip Async Single 3.3V 1M-Bit 64K x 16 20ns 44-Pin TSOP-II Tube/Tray

12 Weeks
-
TSOP
-
RAM, SDR, SRAM - Asynchronous
-
-
2011
e3
yes
活跃
3 (168 Hours)
44
-
Matte Tin (Sn) - annealed
-
-
DUAL
260
1
3.3V
0.8mm
30
44
-
-
-
-
-
128kB
-
-
-
3-STATE
-
-
-
-
-
COMMON
3V
18.41mm
-
10.16mm
符合RoHS标准
表面贴装
44
85°C
-40°C
鸥翼
3.3V
INDUSTRIAL
Parallel
3.6V
3V
1
120mA
20 ns
16b
1 Mb
Asynchronous
16b
1mm
无
无铅
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图片	产品型号	品牌	分类	封装	描述	对比
	AS7C34096A-20TINTR	Alliance Memory, Inc.	存储器	44-TSOP (0.400, 10.16mm Width)	SRAM 4M, 3.3V, 20ns, FAST 512K x 8 Asynch SRAM	对比
	71V016SA20PHG	Integrated Device Technology (IDT)	存储器	TSOP	SRAM 64Kx16 ASYNCHRONOUS 3.3V STATIC RAM	对比
	71V016SA20PHGI	Integrated Device Technology (IDT)	存储器	TSOP	SRAM Chip Async Single 3.3V 1M-Bit 64K x 16 20ns 44-Pin TSOP-II Tube/Tray	对比