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AS7C34096A-20JINTR备选型号: 71V424S15YGI

AS7C34096A-20JINTR

Alliance Memory, Inc.

SRAM 4M, 3.3V, 20ns, FAST 512K x 8 Asynch SRAM

10 Weeks
表面贴装
36-BSOJ (0.400, 10.16mm Width)
36
36-SOJ
Volatile
-40°C~85°C TA
Tape & Reel (TR)
2001
活跃
3 (168 Hours)
85°C
-40°C
3V~3.6V
Parallel
4Mb 512K x 8
20ns
SRAM
Parallel
20ns
3.6V
3V
ROHS3 Compliant
-
-
-
-
-
-
-
-
-
-
-
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-
-
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71V424S15YGI

Integrated Device Technology (IDT)

SRAM 512Kx8 ASYNCHRONOUS 3.3V CMOS SRAM

12 Weeks
-
-
36
-
RAM, SDR, SRAM - Asynchronous
-
-
2008
活跃
3 (168 Hours)
85°C
-40°C
3.3V
Parallel
512kB
15 ns
-
-
-
3.6V
3V
符合RoHS标准
表面贴装
160mA
e3
yes
36
Matte Tin (Sn) - annealed
DUAL
J BEND
260
1
INDUSTRIAL
1
3-STATE
19b
4 Mb
0.02A
COMMON
Asynchronous
8b
3V
23.4mm
3.76mm
10.2mm
2.2mm
无
无铅
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图片	产品型号	品牌	分类	封装	描述	对比
	71V424S15YG8	Integrated Device Technology (IDT)	存储器		SRAM 512Kx8 ASYNCHRONOUS 3.3V CMOS SRAM	对比
	71V424S15YGI	Integrated Device Technology (IDT)	存储器		SRAM 512Kx8 ASYNCHRONOUS 3.3V CMOS SRAM	对比