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AT45DB021E-SHN2B-T备选型号: M45PE20-VMN6P

AT45DB021E-SHN2B-T

Adesto Technologies

Memory: Serial Flash; 2Mbit; SPI / RapidS; 85MHz; 1.65÷3.6V; SO8-W

14 Weeks
Gold
表面贴装
表面贴装
8-SOIC (0.209, 5.30mm Width)
8
Non-Volatile
-40°C~85°C TC
Tape & Reel (TR)
1997
e4
活跃
1 (Unlimited)
8
1.65V~3.6V
DUAL
260
1
1.8V
1.27mm
未说明
8
3.6V
1.65V
SPI, Serial
2Mb 256Bytes x 1024 pages
SYNCHRONOUS
70MHz
8 ns
FLASH
SPI
8b
2MX1
1
8μs, 3ms
22b
2 Mb
2.7V
256B
5.29mm
2.16mm
ROHS3 Compliant
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
M45PE20-VMN6P

Micron Technology Inc.

MICRON M45PE20-VMN6PFlash Memory, Low Voltage, Page Erasable, Byte Alterability, 2 Mbit, 256K x 8bit, 75 MHz

-
-
-
表面贴装
8-SOIC (0.154, 3.90mm Width)
8
Non-Volatile
-40°C~85°C TA
Tube
2004
-
Obsolete
3 (168 Hours)
8
2.7V~3.6V
DUAL
260
1
3V
1.27mm
30
8
-
-
SPI, Serial
2Mb 256K x 8
-
75MHz
8 ns
FLASH
SPI
-
-
-
15ms, 3ms
1b
2 Mb
-
-
4.9mm
-
ROHS3 Compliant
YES
yes
EAR99
M45PE20
3/3.3V
2.7V
8mA
0.00001A
Synchronous
8b
SPI
100000 Write/Erase Cycles
20
HARDWARE/SOFTWARE
3.9mm
1.75mm
无SVHC
无
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集成电路（IC）相关产品

图片	产品型号	品牌	分类	封装	描述	对比
	M45PE20-VMN6P	Micron Technology Inc.	存储器	8-SOIC (0.154, 3.90mm Width)	MICRON M45PE20-VMN6PFlash Memory, Low Voltage, Page Erasable, Byte Alterability, 2 Mbit, 256K x 8bit, 75 MHz	对比
	AT25DF021-SSHF-B	Microchip Technology	存储器	8-SOIC (0.154, 3.90mm Width)	MICROCHIP - AT25DF021-SSHF-B - SPEICHER, DATAFLASH, 2M, SPI, 8SOIC	对比
	IS25LQ020B-JNLE	ISSI, Integrated Silicon Solution Inc	存储器	8-SOIC (0.154, 3.90mm Width)	IC FLASH 2M SPI 104MHZ 8SOIC	对比