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AT45DB161E-SSHD-B备选型号: SST26VF016B-104I/SM

AT45DB161E-SSHD-B

Adesto Technologies

Flash Memory 16M 2.5-3.6V 85Mhz Data Flash

8 Weeks
Gold
表面贴装
表面贴装
8-SOIC (0.154, 3.90mm Width)
8
Non-Volatile
-40°C~85°C TC
Tube
1997
e4
yes
不用于新设计
1 (Unlimited)
8
EAR99
2.5V~3.6V
DUAL
260
1
3V
1.27mm
8
3.3V
3.6V
2.5V
SPI, Serial
16Mb 528Bytes x 4096 pages
26mA
85MHz
6 ns
FLASH
SPI
8b
16MX1
8μs, 4ms
21b
16 Mb
0.00001A
Synchronous
2.7V
SPI
100000 Write/Erase Cycles
20
HARDWARE/SOFTWARE
512B
1.5mm
5.05mm
3.99mm
无SVHC
无
ROHS3 Compliant
无铅
-
-
-
-
-
-
-
-
-
-
-
SST26VF016B-104I/SM

Microchip Technology

IC FLASH 16M SPI 104MHZ 8SOIJ

4 Weeks
-
表面贴装
表面贴装
8-SOIC (0.209, 5.30mm Width)
8
Non-Volatile
-40°C~85°C TA
Tube
2014
e3
-
活跃
1 (Unlimited)
8
3A991.B.1.A
2.7V~3.6V
DUAL
260
1
3V
1.27mm
-
-
3.6V
2.7V
SPI
16Mb 2M x 8
8mA
104MHz
-
FLASH
SPI - Quad I/O
-
16MX1
1.5ms
-
16 Mb
0.000025A
-
2.7V
SPI
100000 Write/Erase Cycles
100
HARDWARE/SOFTWARE
256B
2.03mm
5.26mm
5.25mm
-
-
ROHS3 Compliant
-
SST26 SQI®
Matte Tin (Sn) - annealed
40
SST26VF016B
不合格
3/3.3V
SYNCHRONOUS
SERIAL
BOTTOM/TOP
85°C
NO
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	SST25VF016B-75-4I-QAF	Microchip Technology	存储器	8-WDFN Exposed Pad	MICROCHIP - SST25VF016B-75-4I-QAF - MEMORY, FLASH, 16MBIT, SPI, 8WSON	对比
	SST26VF016B-104I/SM	Microchip Technology	存储器	8-SOIC (0.209, 5.30mm Width)	IC FLASH 16M SPI 104MHZ 8SOIJ	对比
	M25PE16-VMW6G	Micron Technology Inc.	存储器	8-SOIC (0.209, 5.30mm Width)	MICRON - M25PE16-VMW6G - FLASH, SERIAL, 16MBIT, 8WSOIC	对比