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BAR151E6327HTSA1备选型号: BAS19-7-F

BAR151E6327HTSA1

Infineon Technologies

DIODE RF DUAL 100V 140MA SOT-23

4 Weeks
TO-236-3, SC-59, SOT-23-3
表面贴装
3
SILICON
2
Tape & Reel (TR)
150°C TJ
e3
活跃
1 (Unlimited)
3
SMD/SMT
EAR99
Tin (Sn)
ATTENUATOR; SWITCHING
LOW DISTORTION
8541.10.00.80
100V
鸥翼
140mA
BAR15-1
140mA
Dual
PIN - 1 Pair Common Cathode
250mW
140mA
1.25V
100V
1 μs
100V
0.5pF @ 50V 1MHz
100V
100V
HIGH FREQUENCY
12Ohm @ 10mA 100MHz
0.5pF
1 µs
1.3mm
2.9mm
1mm
ROHS3 Compliant
无
无SVHC
无铅
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
BAS19-7-F

Diodes Incorporated

DIODE GP 100V 200MA SOT23-3

19 Weeks
TO-236-3, SC-59, SOT-23-3
表面贴装
3
SILICON
1
Tape & Reel (TR)
-
e3
活跃
1 (Unlimited)
3
-
EAR99
-
-
HIGH RELIABILITY
8541.10.00.70
-
鸥翼
-
BAS19
-
Single
Standard
250mW
400mA
1.25V
100V
50 ns
120V
5pF @ 0V 1MHz
-
-
-
-
-
-
1.4mm
3mm
1.1mm
ROHS3 Compliant
无
-
无铅
Tin
表面贴装
yes
150°C
-65°C
5pF
350mW
DUAL
260
40
3
Small Signal =< 200mA (Io), Any Speed
100nA @ 100V
200mA
1.25V @ 200mA
100nA
-65°C~150°C
2.5A
200mA
100nA
2.5A
50 ns
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	BAV23S-7-F	Diodes Incorporated	二极管 - 整流器 - 阵列	TO-236-3, SC-59, SOT-23-3	DIODE ARRAY GP 200V 400MA SOT23	对比
	MMBD3004C-7-F	Diodes Incorporated	二极管 - 整流器 - 阵列	TO-236-3, SC-59, SOT-23-3	MMBD3004 Series 300 V 225 mA Surface Mount Dual Switching Diode - SOT-23	对比
	BAT18,215	NXP USA Inc.	二极管 - 射频	TO-236-3, SC-59, SOT-23-3	RF DIODE STANDARD 35V TO236AB	对比