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BQ4010YMA-200备选型号: DS1225AD-70IND

BQ4010YMA-200

Texas Instruments

IC NVSRAM 64K PARALLEL 28DIP

Tin
通孔
通孔
28-DIP Module (0.61, 15.49mm)
28
Non-Volatile
0°C~70°C TA
Tube
no
Obsolete
1 (Unlimited)
28
EAR99
8542.32.00.41
4.5V~5.5V
DUAL
1
5V
2.54mm
BQ4010
5V
5V
64Kb 8K x 8
50mA
50mA
NVSRAM
Parallel
8b
8KX8
8
200ns
64 kb
0.004A
200 ns
8b
37.72mm
9.53mm
无
ROHS3 Compliant
含铅
-
-
-
-
-
-
-
DS1225AD-70IND

Maxim Integrated

IC NVSRAM 64K PARALLEL 28EDIP

Tin
通孔
通孔
28-DIP Module (0.600, 15.24mm)
28
Non-Volatile
-40°C~85°C TA
Tube
yes
活跃
1 (Unlimited)
28
EAR99
8473.30.11.40
4.5V~5.5V
DUAL
1
5V
2.54mm
DS1225A
5V
5V
64Kb 8K x 8
85mA
-
NVSRAM
Parallel
8b
8KX8
8
70ns
64 kb
0.01A
70 ns
-
38.227mm
10.668mm
无
ROHS3 Compliant
无铅
10 Weeks
2004
e3
10 YEAR DATA RETENTION
70GHz
28
Unknown
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图片	产品型号	品牌	分类	封装	描述	对比
	DS1225AD-70IND	Maxim Integrated	存储器	28-DIP Module (0.600, 15.24mm)	IC NVSRAM 64K PARALLEL 28EDIP	对比
	7164S25YGI	Integrated Device Technology (IDT)	存储器		SRAM Chip Async Single 5V 64K-Bit 8K x 8 25ns 28-Pin SOJ	对比
	7164S20TPG	Integrated Device Technology (IDT)	存储器	PDIP	SRAM Chip Async Single 5V 64K-Bit 8K x 8 20ns 28-Pin PDIP	对比