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BSH108,215备选型号: PMDPB95XNE,115

BSH108,215

Nexperia USA Inc.

MOSFET TAPE7 PWR-MO

4 Weeks
表面贴装
TO-236-3, SC-59, SOT-23-3
YES
3
SILICON
1.9A Tc
2V @ 1mA
-65°C~150°C TJ
Tape & Reel (TR)
TrenchMOS™
1997
e3
活跃
1 (Unlimited)
3
EAR99
Tin (Sn)
逻辑电平兼容
8541.29.00.75
DUAL
鸥翼
SINGLE WITH BUILT-IN DIODE
增强型MOSFET
830mW
N-Channel
SWITCHING
120m Ω @ 1A, 10V
190pF @ 10V
10nC @ 10V
30V
±20V
1.9A
0.14Ohm
ROHS3 Compliant
-
-
-
-
PMDPB95XNE,115

NXP USA Inc.

MOSFET 2N-CH 30V 2.4A HUSON6

-
表面贴装
6-UDFN Exposed Pad
-
-
-
2.4A
-
-55°C~150°C TJ
Tape & Reel (TR)
-
2012
-
Obsolete
1 (Unlimited)
-
-
-
-
-
-
-
-
-
-
2 N-Channel (Dual)
-
120m Ω @ 2A, 4.5V
143pF @ 15V
2.5nC @ 4.5V
30V
-
-
-
ROHS3 Compliant
6
475mW
1.5V @ 250μA
逻辑电平门
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	PMV37EN,215	NXP USA Inc.	晶体管 - FET，MOSFET - 单个	TO-236-3, SC-59, SOT-23-3	MOSFET N-CH 30V 3.1A SOT-23	对比
	DMP3098L-7	Diodes Incorporated	晶体管 - FET，MOSFET - 单个	TO-236-3, SC-59, SOT-23-3	Trans MOSFET P-CH 30V 3.8A Automotive 3-Pin SOT-23 T/R	对比
	PMDPB95XNE,115	NXP USA Inc.	晶体管 - FET，MOSFET - 阵列	6-UDFN Exposed Pad	MOSFET 2N-CH 30V 2.4A HUSON6	对比