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CY62148ELL-45ZSXI备选型号: AS6C4008-55ZIN

CY62148ELL-45ZSXI

Cypress Semiconductor Corp

IC, SRAM, 4MBIT, PARALLEL, 45NS, TSOP-32

6 Weeks
表面贴装
表面贴装
32-SOIC (0.400, 10.16mm Width)
32
Volatile
15mA
-40°C~85°C TA
Tray
MoBL®
2007
e3
yes
活跃
3 (168 Hours)
32
Matte Tin (Sn)
5V
DUAL
260
1
22.22MHz
30
CY62148
5V
4Mb 512K x 8
1
SRAM
Parallel
3-STATE
45ns
19b
4 Mb
0.000007A
45 ns
COMMON
Asynchronous
8b
2V
85°C
1.2mm
20.95mm
10.16mm
无SVHC
无
ROHS3 Compliant
无铅
-
-
-
-
-
-
AS6C4008-55ZIN

Alliance Memory, Inc.

ALLIANCE MEMORY AS6C4008-55ZIN SRAM, 4MB, 512KX8, 3-5V, 32TSOPII

8 Weeks
-
表面贴装
32-SOIC (0.400, 10.16mm Width)
32
Volatile
-
-40°C~85°C TA
Tray
-
2009
e3
yes
活跃
3 (168 Hours)
32
Tin (Sn)
3V
DUAL
260
1
-
40
-
3/5V
4Mb 512K x 8
1
SRAM
Parallel
3-STATE
55ns
19b
4 Mb
0.00003A
55 ns
COMMON
-
-
2V
-
-
20.95mm
-
无SVHC
无
ROHS3 Compliant
无铅
YES
EAR99
8
18MHz
5.5V
2.7V
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图片	产品型号	品牌	分类	封装	描述	对比
	CY62148EV30LL-45ZSXIT	Cypress Semiconductor Corp	存储器	32-SOIC (0.400, 10.16mm Width)	IC SRAM 4MBIT 45NS 32TSOP	对比
	AS6C4008-55ZIN	Alliance Memory, Inc.	存储器	32-SOIC (0.400, 10.16mm Width)	ALLIANCE MEMORY AS6C4008-55ZIN SRAM, 4MB, 512KX8, 3-5V, 32TSOPII	对比
	R1LP0408DSB-5SI#B0	Renesas Electronics America	存储器	32-SOIC (0.400, 10.16mm Width)	IC SRAM 4M PARALLEL 32TSOP II	对比