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CY62148EV30LL-45BVI备选型号: IS62WV5128BLL-55BI

CY62148EV30LL-45BVI

Cypress Semiconductor Corp

IC SRAM 4M PARALLEL 36VFBGA

6 Weeks
表面贴装
表面贴装
36-VFBGA
36
Volatile
-40°C~85°C TA
Tray
MoBL®
2003
e0
no
活跃
3 (168 Hours)
36
锡铅
2.2V~3.6V
BOTTOM
220
1
3V
0.75mm
CY62148
36
3V
3.6V
2.2V
4Mb 512K x 8
1
20mA
SRAM
Parallel
3-STATE
8
45ns
19b
4 Mb
0.000007A
45 ns
COMMON
Asynchronous
8b
8mm
无
Non-RoHS Compliant
含铅
-
IS62WV5128BLL-55BI

ISSI, Integrated Silicon Solution Inc

IC SRAM 4M PARALLEL 36MINIBGA

-
-
表面贴装
36-TFBGA
36
Volatile
-40°C~85°C TA
Tray
-
-
e0
no
活跃
2 (1 Year)
36
Tin/Lead (Sn/Pb)
2.5V~3.6V
BOTTOM
-
1
2.8V
0.75mm
-
36
3.3V
3.6V
2.5V
4Mb 512K x 8
1
-
SRAM
Parallel
3-STATE
8
55ns
19b
4 Mb
-
55 ns
COMMON
-
-
8mm
无
Non-RoHS Compliant
-
YES
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图片	产品型号	品牌	分类	封装	描述	对比
	IS62WV5128BLL-55BLI	ISSI, Integrated Silicon Solution Inc	存储器	36-TFBGA	IC SRAM 4M PARALLEL 36MINIBGA	对比
	AS6C4008A-55BIN	Alliance Memory, Inc.	存储器	36-TFBGA	SRAM 4M, 2.7-5.5V, 55ns 512K x 8 Asynch SRAM	对比
	IS62WV5128BLL-55BI	ISSI, Integrated Silicon Solution Inc	存储器	36-TFBGA	IC SRAM 4M PARALLEL 36MINIBGA	对比