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CY62157EV30LL-45BVI备选型号: AS6C8016A-55BIN

CY62157EV30LL-45BVI

Cypress Semiconductor Corp

IC SRAM 8MBIT 45NS 48VFBGA

6 Weeks
表面贴装
表面贴装
48-VFBGA
48
Volatile
-40°C~85°C TA
Tray
MoBL®
2011
e0
no
活跃
3 (168 Hours)
48
Tin/Lead (Sn/Pb)
2.2V~3.6V
BOTTOM
220
1
3V
0.75mm
CY62157
48
3V
3.6V
2.2V
8Mb 512K x 16
1
25mA
SRAM
Parallel
3-STATE
16
45ns
19b
8 Mb
0.000005A
45 ns
COMMON
Asynchronous
16b
8mm
无
Non-RoHS Compliant
含铅
-
AS6C8016A-55BIN

Alliance Memory, Inc.

SRAM Chip Async Single 3.3V 8M-Bit 512K x 16 55ns 48-Pin FBGA

8 Weeks
-
表面贴装
48-VFBGA
48
Volatile
-40°C~85°C TA
Tray
-
1997
-
yes
活跃
3 (168 Hours)
48
-
2.7V~3.6V
BOTTOM
-
1
3.3V
0.75mm
-
48
3.3V
3.6V
2.7V
8Mb 512K x 16
1
-
SRAM
Parallel
-
16
55ns
19b
8 Mb
-
55 ns
-
-
-
-
无
ROHS3 Compliant
无铅
YES
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集成电路（IC）相关产品

图片	产品型号	品牌	分类	封装	描述	对比
	CY62158EV30LL-45BVXI	Cypress Semiconductor Corp	存储器	48-VFBGA	IC SRAM 8M PARALLEL 48VFBGA	对比
	IS62WV51216BLL-55BLI	ISSI, Integrated Silicon Solution Inc	存储器	48-TFBGA	IC SRAM 8M PARALLEL 48MINIBGA	对比
	AS6C8016A-55BIN	Alliance Memory, Inc.	存储器	48-VFBGA	SRAM Chip Async Single 3.3V 8M-Bit 512K x 16 55ns 48-Pin FBGA	对比