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CY62157EV30LL-45BVXI备选型号: AS6C8016A-55BIN

CY62157EV30LL-45BVXI

Cypress Semiconductor Corp

CYPRESS SEMICONDUCTOR - CY62157EV30LL-45BVXI - IC, SRAM, 8MB, 512KX16, 3V, VFBGA48

6 Weeks
表面贴装
表面贴装
48-VFBGA
48
223.195796mg
Volatile
25mA
-40°C~85°C TA
Tray
MoBL®
2001
e1
yes
活跃
3 (168 Hours)
48
SMD/SMT
Tin/Silver/Copper (Sn/Ag/Cu)
3V
BOTTOM
260
1
0.75mm
1MHz
30
CY62157
25mA
8Mb 512K x 16
1
SRAM
Parallel
3-STATE
16
45ns
19b
8 Mb
0.000005A
45 ns
COMMON
Asynchronous
16b
3.6V
2.2V
8mm
无SVHC
无
ROHS3 Compliant
无铅
-
AS6C8016A-55BIN

Alliance Memory, Inc.

SRAM Chip Async Single 3.3V 8M-Bit 512K x 16 55ns 48-Pin FBGA

8 Weeks
-
表面贴装
48-VFBGA
48
-
Volatile
-
-40°C~85°C TA
Tray
-
1997
-
yes
活跃
3 (168 Hours)
48
-
-
3.3V
BOTTOM
-
1
0.75mm
-
-
-
-
8Mb 512K x 16
1
SRAM
Parallel
-
16
55ns
19b
8 Mb
-
55 ns
-
-
-
3.6V
2.7V
-
-
无
ROHS3 Compliant
无铅
YES
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图片	产品型号	品牌	分类	封装	描述	对比
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	AS6C8016A-55BIN	Alliance Memory, Inc.	存储器	48-VFBGA	SRAM Chip Async Single 3.3V 8M-Bit 512K x 16 55ns 48-Pin FBGA	对比
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