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CY62167DV30LL-55BVIT备选型号: IS66WV1M16DBLL-55BLI

CY62167DV30LL-55BVIT

Cypress Semiconductor Corp

IC SRAM 16MBIT 55NS 48VFBGA

6 Weeks
48-VFBGA
表面贴装
表面贴装
48
Volatile
Tape & Reel (TR)
MoBL®
-40°C~85°C TA
2003
e0
no
Obsolete
3 (168 Hours)
48
Tin/Lead (Sn/Pb)
2.2V~3.6V
BOTTOM
220
1
3V
0.75mm
CY62167
3V
3.6V
2.2V
16Mb 2M x 8 1M x 16
1
30mA
SRAM
Parallel
3-STATE
16
55ns
20b
16 Mb
55 ns
COMMON
Asynchronous
16b
9.5mm
无
Non-RoHS Compliant
含铅
-
-
IS66WV1M16DBLL-55BLI

ISSI, Integrated Silicon Solution Inc

SRAM 16Mb (1Mx16) 55ns Pseudo SRAM

-
48-TFBGA
表面贴装
-
48
Volatile
Tray
-
-40°C~85°C TA
-
-
-
Discontinued
3 (168 Hours)
48
-
2.5V~3.6V
BOTTOM
-
1
3V
0.75mm
-
3.3V
3.6V
2.5V
16Mb 1M x 16
1
-
PSRAM
Parallel
3-STATE
16
55ns
20b
16 Mb
55 ns
COMMON
-
-
8mm
无
ROHS3 Compliant
-
YES
48
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图片	产品型号	品牌	分类	封装	描述	对比
	AS6C1616A-55BIN	Alliance Memory, Inc.	存储器	48-VFBGA	SRAM 16M, 2.7-3.6V, 55ns 1024K x 16 Asyn SRAM	对比
	IS66WV1M16DBLL-55BLI	ISSI, Integrated Silicon Solution Inc	存储器	48-TFBGA	SRAM 16Mb (1Mx16) 55ns Pseudo SRAM	对比
	CY62167EV30LL-45BVXI	Cypress Semiconductor Corp	存储器	48-VFBGA	CYPRESS SEMICONDUCTOR - CY62167EV30LL-45BVXI - SRAM, 16 Mbit, 1M x 16bit, 2.2V to 3.6V, FBGA, 48 Pins, 45 ns	对比