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CY7C1009D-10VXI备选型号: 71V124SA10PHGI

CY7C1009D-10VXI

Cypress Semiconductor Corp

IC, SRAM, 1MBIT, PARALLEL, 10NS, SOJ-32

6 Weeks
表面贴装
表面贴装
32-BSOJ (0.300, 7.62mm Width)
32
Volatile
-40°C~85°C TA
Tube
1996
e4
yes
活跃
3 (168 Hours)
32
Nickel/Palladium/Gold (Ni/Pd/Au)
4.5V~5.5V
DUAL
260
1
5V
30
CY7C1009
32
5V
5V
5V
1Mb 128K x 8
1
80mA
SRAM
Parallel
3-STATE
10ns
17b
1 Mb
0.003A
100MHz
COMMON
Asynchronous
8b
3.556mm
21.08mm
7.747mm
无SVHC
无
ROHS3 Compliant
无铅
-
-
-
-
-
-
-
-
-
-
71V124SA10PHGI

Integrated Device Technology (IDT)

SRAM 128Kx8 ASYNCHRONOUS 3.3V STATIC RAM

7 Weeks
表面贴装
-
SOIC
32
RAM, SDR, SRAM - Asynchronous
-
-
2013
e3
yes
活跃
3 (168 Hours)
32
Matte Tin (Sn) - annealed
-
DUAL
260
1
3.3V
30
-
32
3.3V
-
-
128kB
1
150mA
-
-
3-STATE
-
17b
1 Mb
-
-
COMMON
Asynchronous
8b
-
20.95mm
10.16mm
-
-
符合RoHS标准
无铅
85°C
-40°C
鸥翼
不合格
INDUSTRIAL
Parallel
3.6V
3.15V
10 ns
1mm
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