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CY7C1020D-10VXI备选型号: AS7C3513B-10JCN

CY7C1020D-10VXI

Cypress Semiconductor Corp

IC SRAM 512KBIT 10NS 44SOJ

7 Weeks
表面贴装
表面贴装
44-BSOJ (0.400, 10.16mm Width)
44
Volatile
-40°C~85°C TA
Tube
1996
e4
yes
活跃
3 (168 Hours)
44
Nickel/Palladium/Gold (Ni/Pd/Au)
4.5V~5.5V
DUAL
260
1
5V
30
CY7C1020
44
5V
5V
512Kb 32K x 16
1
80mA
SRAM
Parallel
3-STATE
16
10ns
15b
512 kb
0.003A
100MHz
COMMON
Asynchronous
16b
2V
28.575mm
3.7592mm
无
ROHS3 Compliant
无铅
-
-
-
-
-
-
-
AS7C3513B-10JCN

Alliance Memory, Inc.

SRAM Chip Async Single 3.3V 512K-Bit 32K x 16 10ns 44-Pin SOJ

8 Weeks
-
表面贴装
44-BSOJ (0.400, 10.16mm Width)
44
Volatile
0°C~70°C TA
Tube
1993
-
-
活跃
3 (168 Hours)
-
-
3V~3.6V
-
-
-
-
-
-
-
3.3V
-
512Kb 32K x 16
1
-
SRAM
Parallel
-
-
10ns
15b
512 kb
-
-
-
-
-
-
-
-
无
ROHS3 Compliant
-
44-SOJ
70°C
0°C
Parallel
3.6V
3V
10ns
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	AS7C3513B-10JCN	Alliance Memory, Inc.	存储器	44-BSOJ (0.400, 10.16mm Width)	SRAM Chip Async Single 3.3V 512K-Bit 32K x 16 10ns 44-Pin SOJ	对比