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CY7C1021D-10VXI备选型号: AS7C1026B-10TCN

CY7C1021D-10VXI

Cypress Semiconductor Corp

CYPRESS SEMICONDUCTOR CY7C1021D-10VXI SRAM, 1MBIT, PARALLEL, 10NS, 44SOJ

7 Weeks
表面贴装
表面贴装
44-BSOJ (0.400, 10.16mm Width)
44
Volatile
-40°C~85°C TA
Tube
1996
e4
yes
活跃
3 (168 Hours)
44
Nickel/Palladium/Gold (Ni/Pd/Au)
4.5V~5.5V
DUAL
260
1
5V
30
CY7C1021
44
5V
5V
1Mb 64K x 16
1
80mA
SRAM
Parallel
3-STATE
16
10ns
16b
1 Mb
0.003A
100MHz
COMMON
Asynchronous
16b
2V
28.575mm
3.7592mm
无SVHC
无
ROHS3 Compliant
无铅
-
-
-
-
-
-
-
AS7C1026B-10TCN

Alliance Memory, Inc.

SRAM 1M, 5V, 10ns FAST 64K x 16 Asynch SRAM

8 Weeks
-
表面贴装
44-TSOP (0.400, 10.16mm Width)
44
Volatile
0°C~70°C TA
Tray
1996
-
-
活跃
3 (168 Hours)
-
-
4.5V~5.5V
-
-
-
-
-
-
-
5V
-
1Mb 64K x 16
1
-
SRAM
Parallel
-
-
10ns
16b
1 Mb
-
-
-
-
-
-
-
-
-
无
ROHS3 Compliant
无铅
44-TSOP2
70°C
0°C
Parallel
5.5V
4.5V
10ns
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图片	产品型号	品牌	分类	封装	描述	对比
	AS7C1026B-12TCN	Alliance Memory, Inc.	存储器	44-TSOP (0.400, 10.16mm Width)	SRAM Chip Async Single 5V 1M-Bit 64K x 16 12ns 44-Pin TSOP-II	对比
	AS7C1026B-10TCN	Alliance Memory, Inc.	存储器	44-TSOP (0.400, 10.16mm Width)	SRAM 1M, 5V, 10ns FAST 64K x 16 Asynch SRAM	对比