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CY7C1021DV33-10ZSXIT备选型号: 71V016SA12PHG8

CY7C1021DV33-10ZSXIT

Cypress Semiconductor Corp

CYPRESS SEMICONDUCTOR CY7C1021DV33-10ZSXIT SRAM, 1MBIT, PARALLEL, 10NS, TSOP-44

8 Weeks
表面贴装
表面贴装
44-TSOP (0.400, 10.16mm Width)
44
Volatile
60mA
-40°C~85°C TA
Tape & Reel (TR)
1996
e4
yes
活跃
3 (168 Hours)
44
Nickel/Palladium/Gold (Ni/Pd/Au)
3.3V
DUAL
260
1
0.8mm
30
CY7C1021
1Mb 64K x 16
1
SRAM
Parallel
3-STATE
16
10ns
16b
1 Mb
0.003A
100MHz
COMMON
Asynchronous
16b
2V
3.63V
3V
无
ROHS3 Compliant
无铅
-
-
-
-
-
-
-
-
-
71V016SA12PHG8

Integrated Device Technology (IDT)

SRAM Chip Async Single 3.3V 1M-Bit 64K x 16 12ns 44-Pin TSOP-II T/R

12 Weeks
表面贴装
-
TSOP
44
RAM, SDR, SRAM - Asynchronous
150mA
-
Tape & Reel
2009
e3
yes
活跃
3 (168 Hours)
44
Matte Tin (Sn) - annealed
3.3V
DUAL
260
1
0.8mm
30
-
128kB
1
-
-
3-STATE
-
-
16b
1 Mb
-
-
COMMON
Asynchronous
16b
3V
3.6V
3V
无
符合RoHS标准
无铅
70°C
0°C
鸥翼
COMMERCIAL
Parallel
12 ns
18.41mm
10.16mm
1mm
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图片	产品型号	品牌	分类	封装	描述	对比
	71V016SA12PHGI	Integrated Device Technology (IDT)	存储器	TSOP	SRAM Chip Async Single 3.3V 1M-Bit 64K x 16 12ns 44-Pin TSOP-II Tube/Tray	对比
	71V016SA10PHG	Integrated Device Technology (IDT)	存储器	TSOP	SRAM 64Kx16 ASYNCHRONOUS 3.3V STATIC RAM	对比
	71V016SA12PHG8	Integrated Device Technology (IDT)	存储器	TSOP	SRAM Chip Async Single 3.3V 1M-Bit 64K x 16 12ns 44-Pin TSOP-II T/R	对比