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CY7C1049GN30-10VXIT备选型号: IS61WV5128BLL-10KLI

CY7C1049GN30-10VXIT

Cypress Semiconductor Corp

IC SRAM 4MBIT 10NS 36SOJ

8 Weeks
表面贴装
36-BSOJ (0.400, 10.16mm Width)
YES
36
Volatile
-40°C~85°C TA
Tape & Reel (TR)
2012
yes
活跃
3 (168 Hours)
36
3A991.B.2.A
8542.32.00.41
2.2V~3.6V
DUAL
未说明
1
3V
1.27mm
未说明
3.6V
2.2V
4Mb 512K x 8
SRAM
Parallel
512KX8
8
10ns
4194304 bit
10 ns
23.495mm
3.7592mm
10.16mm
ROHS3 Compliant
无铅
-
-
-
-
-
-
-
-
-
-
-
-
-
-
IS61WV5128BLL-10KLI

ISSI, Integrated Silicon Solution Inc

SRAM Chip Async Single 2.5V/3.3V 4M-bit 512K x 8 10ns 36-Pin SOJ

8 Weeks
表面贴装
36-BSOJ (0.400, 10.16mm Width)
YES
36
Volatile
-40°C~85°C TA
Tube
-
yes
活跃
3 (168 Hours)
36
-
-
1.65V~3.6V
DUAL
260
1
3.3V
-
10
3.6V
2.4V
4Mb 512K x 8
SRAM
Parallel
-
8
10ns
-
-
23.49mm
3.76mm
-
ROHS3 Compliant
-
e3
Matte Tin (Sn) - annealed
36
1
40mA
3-STATE
19b
4 Mb
0.008A
COMMON
Asynchronous
8b
2V
无
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	IS61C5128AL-10KLI	ISSI, Integrated Silicon Solution Inc	存储器	36-BSOJ (0.400, 10.16mm Width)	SRAM Chip Async Single 5V 4M-bit 512K x 8 10ns 36-Pin SOJ	对比
	IS61WV5128BLL-10KLI	ISSI, Integrated Silicon Solution Inc	存储器	36-BSOJ (0.400, 10.16mm Width)	SRAM Chip Async Single 2.5V/3.3V 4M-bit 512K x 8 10ns 36-Pin SOJ	对比
	AS6C4008-55BIN	Alliance Memory, Inc.	存储器	36-TFBGA	SRAM Chip Async Single 3V 4M-Bit 512K x 8 55ns 36-Pin TFBGA	对比