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CY7C1371D-133BGC备选型号: CY7C1370D-200BGXC

CY7C1371D-133BGC

Cypress Semiconductor Corp

IC SRAM 18M PARALLEL 119PBGA

119-BGA
表面贴装
表面贴装
119
210mA
Volatile
0°C~70°C TA
Tray
NoBL™
2004
e0
no
Obsolete
3 (168 Hours)
119
3A991.B.2.A
Tin/Lead (Sn/Pb)
FLOW-THROUGH ARCHITECTURE
3.3V
BOTTOM
220
1
1.27mm
CY7C1371
18Mb 512K x 36
4
133MHz
6.5ns
SRAM
Parallel
512KX36
3-STATE
36
19b
18 Mb
0.07A
COMMON
Synchronous
36b
3.6V
3.135V
22mm
无
Non-RoHS Compliant
含铅
-
CY7C1370D-200BGXC

Cypress Semiconductor Corp

IC SRAM 18M PARALLEL 119PBGA

119-BGA
表面贴装
表面贴装
119
300mA
Volatile
0°C~70°C TA
Tray
NoBL™
2004
e1
-
Obsolete
3 (168 Hours)
119
3A991.B.2.A
Tin/Silver/Copper (Sn/Ag/Cu)
流水线结构
3.3V
BOTTOM
260
1
1.27mm
CY7C1370
18Mb 512K x 36
4
200MHz
3ns
SRAM
Parallel
512KX36
3-STATE
36
19b
18 Mb
0.07A
COMMON
Synchronous
36b
3.6V
3.135V
22mm
无
ROHS3 Compliant
无铅
20
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	71T75602S133BGGI	Integrated Device Technology (IDT)	存储器	BGA	SRAM Chip Sync Single 2.5V 18M-Bit 512K x 36 4.2ns 119-Pin BGA Tube/Tray	对比