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CY7C185-15VI备选型号: 7164S20YG

CY7C185-15VI

Cypress Semiconductor Corp

IC SRAM 64K PARALLEL 28SOJ

表面贴装
表面贴装
28-BSOJ (0.300, 7.62mm Width)
28
Volatile
-40°C~85°C TA
Tube
1996
e0
no
Obsolete
3 (168 Hours)
28
EAR99
Tin/Lead (Sn/Pb)
4.5V~5.5V
DUAL
220
1
5V
CY7C185
28
5V
5V
5V
64Kb 8K x 8
1
130mA
SRAM
Parallel
8KX8
3-STATE
8
15ns
13b
64 kb
COMMON
Asynchronous
8b
YES
3.556mm
无
Non-RoHS Compliant
含铅
-
-
-
-
-
-
-
-
-
-
-
-
7164S20YG

Integrated Device Technology (IDT)

SRAM Chip Async Single 5V 64K-Bit 8K x 8 20ns 28-Pin SOJ Tube

表面贴装
-
-
28
RAM, SDR, SRAM - Asynchronous
-
-
2009
e3
yes
活跃
3 (168 Hours)
28
EAR99
Matte Tin (Sn) - annealed
-
DUAL
260
1
5V
-
28
5V
5V
-
8kB
1
100mA
-
-
8KX8
3-STATE
-
-
13b
64 kb
COMMON
Asynchronous
8b
-
3.556mm
无
符合RoHS标准
无铅
7 Weeks
70°C
0°C
J BEND
COMMERCIAL
Parallel
5.5V
4.5V
20 ns
17.9mm
7.6mm
2.67mm
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图片	产品型号	品牌	分类	封装	描述	对比
	7164S20TPG	Integrated Device Technology (IDT)	存储器	PDIP	SRAM Chip Async Single 5V 64K-Bit 8K x 8 20ns 28-Pin PDIP	对比
	AS7C164A-15JCN	Alliance Memory, Inc.	存储器	28-BSOJ (0.300, 7.62mm Width)	IC SRAM 64K PARALLEL 28SOJ	对比
	7164S20YG	Integrated Device Technology (IDT)	存储器		SRAM Chip Async Single 5V 64K-Bit 8K x 8 20ns 28-Pin SOJ Tube	对比