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FDB13AN06A0备选型号: IRFZ46ZSTRLPBF

FDB13AN06A0

ON Semiconductor

Trans MOSFET N-CH 60V 10.9A 3-Pin(2 Tab) D2PAK T/R

ACTIVE (Last Updated: 4 days ago)
8 Weeks
Tin
表面贴装
表面贴装
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
3
1.31247g
SILICON
10.9A Ta 62A Tc
-55°C~175°C TJ
Tape & Reel (TR)
PowerTrench®
2003
e3
yes
活跃
1 (Unlimited)
2
SMD/SMT
EAR99
13.5MOhm
60V
鸥翼
未说明
not_compliant
62A
未说明
R-PSSO-G2
不合格
Single
增强型MOSFET
115W
DRAIN
9 ns
N-Channel
SWITCHING
13.5m Ω @ 62A, 10V
4V @ 250μA
1350pF @ 25V
29nC @ 10V
96ns
±20V
26 ns
62A
4V
20V
60V
60V
56 mJ
4 V
4.83mm
10.67mm
11.33mm
无SVHC
ROHS3 Compliant
无铅
-
-
-
-
IRFZ46ZSTRLPBF

Infineon Technologies

MOSFET N-CH 55V 51A D2PAK

-
12 Weeks
-
表面贴装
表面贴装
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
3
-
SILICON
51A Tc
-55°C~175°C TJ
Tape & Reel (TR)
HEXFET®
2010
e3
-
活跃
1 (Unlimited)
2
-
EAR99
13.6MOhm
55V
鸥翼
260
-
51A
30
R-PSSO-G2
-
Single
增强型MOSFET
82W
DRAIN
13 ns
N-Channel
SWITCHING
13.6m Ω @ 31A, 10V
4V @ 250μA
1460pF @ 25V
46nC @ 10V
63ns
±20V
39 ns
51A
4V
20V
55V
55V
97 mJ
4 V
4.826mm
10.668mm
9.65mm
无SVHC
ROHS3 Compliant
Contains Lead, Lead Free
Matte Tin (Sn) - with Nickel (Ni) barrier
AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE
200A
无
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图片	产品型号	品牌	分类	封装	描述	对比
	FDB14AN06LA0	ON Semiconductor	晶体管 - FET，MOSFET - 单个	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	MOSFET N-CH 60V 67A TO-263AB	对比
	FDB14AN06LA0-F085	ON Semiconductor	晶体管 - FET，MOSFET - 单个	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	MOSFET N-CH 60V 67A D2PAK	对比
	IRF1010ZSPBF	Infineon Technologies	晶体管 - FET，MOSFET - 单个	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	MOSFET N-CH 55V 75A D2PAK	对比