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FDB5800备选型号: IRF1405ZSTRLPBF

FDB5800

ON Semiconductor

MOSFET N-CH 60V 80A D2PAK

ACTIVE (Last Updated: 23 hours ago)
8 Weeks
Tin
表面贴装
表面贴装
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
3
1.31247g
SILICON
14A Ta 80A Tc
-55°C~175°C TJ
Tape & Reel (TR)
PowerTrench®
2017
e3
yes
活跃
1 (Unlimited)
2
EAR99
6MOhm
鸥翼
R-PSSO-G2
Single
增强型MOSFET
242W
DRAIN
20.3 ns
N-Channel
SWITCHING
6m Ω @ 80A, 10V
2.5V @ 250μA
6625pF @ 15V
135nC @ 10V
22ns
±20V
12.1 ns
80A
1V
20V
60V
652 mJ
4.83mm
10.67mm
11.33mm
无SVHC
无
ROHS3 Compliant
无铅
-
-
-
-
-
-
IRF1405ZSTRLPBF

Infineon Technologies

MOSFET N-CH 55V 75A D2PAK

-
15 Weeks
-
表面贴装
表面贴装
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
3
-
SILICON
75A Tc
-55°C~175°C TJ
Tape & Reel (TR)
HEXFET®
2008
e3
-
Obsolete
1 (Unlimited)
2
EAR99
-
鸥翼
R-PSSO-G2
Single
增强型MOSFET
230W
DRAIN
18 ns
N-Channel
SWITCHING
4.9m Ω @ 75A, 10V
4V @ 250μA
4780pF @ 25V
180nC @ 10V
110ns
±20V
82 ns
75A
-
20V
55V
420 mJ
4.826mm
10.668mm
9.65mm
-
无
ROHS3 Compliant
无铅
Matte Tin (Sn) - with Nickel (Ni) barrier
AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE
260
30
0.0049Ohm
600A
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图片	产品型号	品牌	分类	封装	描述	对比
	STB80NF55L-06T4	STMicroelectronics	晶体管 - FET，MOSFET - 单个	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	MOSFET N-CH 55V 80A D2PAK	对比
	IRF1405ZSTRLPBF	Infineon Technologies	晶体管 - FET，MOSFET - 单个	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	MOSFET N-CH 55V 75A D2PAK	对比
	IRF1407STRLPBF	Infineon Technologies	晶体管 - FET，MOSFET - 单个	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Single N-Channel 75 V 0.0078 Ohm 250 nC HEXFET® Power Mosfet - D2PAK	对比