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FDD850N10L备选型号: FQD19N10LTM

FDD850N10L

ON Semiconductor

MOSFET 100V N-Channel PowerTrench MOSFET

8 Weeks
ACTIVE (Last Updated: 1 day ago)
TO-252-3, DPak (2 Leads + Tab), SC-63
表面贴装
表面贴装
3
260.37mg
SILICON
27 ns
2010
PowerTrench®
Tape & Reel (TR)
-55°C~175°C TJ
e3
yes
活跃
1 (Unlimited)
2
EAR99
Tin (Sn)
鸥翼
R-PSSO-G2
Single
增强型MOSFET
50W
DRAIN
17 ns
N-Channel
SWITCHING
75m Ω @ 12A, 10V
2.5V @ 250μA
1465pF @ 25V
28.9nC @ 10V
21ns
±20V
8 ns
15.7A
TO-252AA
20V
0.096Ohm
100V
6.22mm
6.73mm
2.39mm
ROHS3 Compliant
无
-
-
-
-
-
-
-
-
-
FQD19N10LTM

ON Semiconductor

Trans MOSFET N-CH 100V 15.6A 3-Pin(2 Tab) DPAK T/R

6 Weeks
ACTIVE (Last Updated: 1 day ago)
TO-252-3, DPak (2 Leads + Tab), SC-63
表面贴装
表面贴装
3
260.37mg
SILICON
15.6A Tc
2000
QFET®
Tape & Reel (TR)
-55°C~150°C TJ
e3
yes
活跃
1 (Unlimited)
2
EAR99
-
鸥翼
R-PSSO-G2
Single
增强型MOSFET
2.5W
DRAIN
14 ns
N-Channel
SWITCHING
100m Ω @ 7.8A, 10V
2V @ 250μA
870pF @ 25V
18nC @ 5V
410ns
±20V
140 ns
15.6A
-
20V
-
100V
6.1mm
6.6mm
2.3mm
ROHS3 Compliant
无
Tin
100mOhm
100V
15.6A
2V
62.4A
220 mJ
无SVHC
无铅
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