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HGT1S10N120BNST备选型号: IRG4BH20K-SPBF

HGT1S10N120BNST

ON Semiconductor

IGBT 1200V 35A 298W TO263AB

ACTIVE (Last Updated: 1 day ago)
4 Weeks
表面贴装
表面贴装
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
3
1.31247g
SILICON
1.2kV
2.7V
-55°C~150°C TJ
Tape & Reel (TR)
2017
e3
yes
活跃
1 (Unlimited)
2
EAR99
Tin (Sn)
低导通损耗
8541.29.00.95
1.2kV
298W
鸥翼
35A
HGT1S10N120
R-PSSO-G2
15ns
Single
298W
COLLECTOR
Standard
MOTOR CONTROL
N-CHANNEL
1.2kV
35A
1200V
1.2kV
32 ns
2.7V @ 15V, 10A
55A
330 ns
NPT
100nC
80A
23ns/165ns
320μJ (on), 800μJ (off)
20V
200ns
4.83mm
10.67mm
9.65mm
无SVHC
无
ROHS3 Compliant
无铅
-
-
-
-
IRG4BH20K-SPBF

Infineon Technologies

IGBT 1200V 11A 60W D2PAK

-
9 Weeks
表面贴装
表面贴装
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
3
-
SILICON
1.2kV
3.17V
-55°C~150°C TJ
Tube
2000
e3
-
最后一次购买
1 (Unlimited)
2
EAR99
Matte Tin (Sn) - with Nickel (Ni) barrier
低导通损耗
-
1.2kV
60W
鸥翼
11A
-
R-PSSO-G2
-
Single
60W
COLLECTOR
Standard
MOTOR CONTROL
N-CHANNEL
4.3V
11A
1200V
-
51 ns
4.3V @ 15V, 5A
-
720 ns
-
28nC
22A
23ns/93ns
450μJ (on), 440μJ (off)
20V
400ns
4.83mm
10.67mm
9.65mm
无SVHC
无
ROHS3 Compliant
Contains Lead, Lead Free
260
30
26ns
6.5V
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	IRG4BH20K-SPBF	Infineon Technologies	晶体管 - IGBT - 单个	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	IGBT 1200V 11A 60W D2PAK	对比