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HGTG5N120BND备选型号: STGW30NC120HD

HGTG5N120BND

ON Semiconductor

FAIRCHILD SEMICONDUCTOR HGTG5N120BND IGBT Single Transistor, 21 A, 2.7 V, 167 W, 1.2 kV, TO-247, 3 Pins

ACTIVE, NOT REC (Last Updated: 2 days ago)
通孔
通孔
TO-247-3
Tin
3
6.39g
SILICON
1
2.45V
-55°C~150°C TJ
Tube
e3
yes
不用于新设计
1 (Unlimited)
3
EAR99
低导通损耗
8541.29.00.95
1.2kV
167W
21A
Single
167W
COLLECTOR
Standard
MOTOR CONTROL
N-CHANNEL
1.2kV
21A
65 ns
1200V
600V
35 ns
2.7V @ 15V, 5A
21A
357 ns
NPT
53nC
40A
22ns/160ns
450μJ (on), 390μJ (off)
15.87mm
20.82mm
4.82mm
无SVHC
无
ROHS3 Compliant
无铅
-
-
-
-
-
-
-
-
-
STGW30NC120HD

STMicroelectronics

STMICROELECTRONICS STGW30NC120HD IGBT Single Transistor, 60 A, 2.75 V, 220 W, 1.2 kV, TO-247, 3 Pins

ACTIVE (Last Updated: 8 months ago)
通孔
通孔
TO-247-3
-
3
38.000013g
SILICON
1.2kV
2.75V
-55°C~150°C TJ
Tube
e3
-
活跃
1 (Unlimited)
3
EAR99
-
-
1.2kV
220W
30A
Single
220W
-
Standard
电源控制
N-CHANNEL
1.2kV
60A
152ns
1200V
-
41 ns
2.75V @ 15V, 20A
30A
928 ns
-
110nC
-
29ns/275ns
1.66mJ (on), 4.44mJ (off)
15.75mm
20.15mm
5.15mm
无SVHC
无
ROHS3 Compliant
无铅
8 Weeks
PowerMESH™
Tin (Sn)
STGW30
3
29 ns
11ns
25V
5.75V
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	HGTG10N120BND	ON Semiconductor	晶体管 - IGBT - 单个	TO-247-3	IGBT 1200V 35A 298W TO247	对比
	IKW08T120FKSA1	Infineon Technologies	晶体管 - IGBT - 单个	TO-247-3	IGBT 1200V 16A 70W TO247-3	对比
	STGW30NC120HD	STMicroelectronics	晶体管 - IGBT - 单个	TO-247-3	STMICROELECTRONICS STGW30NC120HD IGBT Single Transistor, 60 A, 2.75 V, 220 W, 1.2 kV, TO-247, 3 Pins	对比