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HYB25D512800CE-5备选型号: IS43R16160D-5TLI

HYB25D512800CE-5

Qimonda

IC SDRAM 512MBIT 200MHZ 66TSOP

YES
表面贴装
66-TSSOP (0.400, 10.16mm Width)
66
Volatile
2007
0°C~70°C TA
Tape & Reel (TR)
e3
Discontinued
1 (Unlimited)
66
EAR99
Matte Tin (Sn)
AUTO/SELF REFRESH
8542.32.00.28
2.5V
DUAL
260
1
0.65mm
40
不合格
2.6V
512Mb 64M x 8
1
SYNCHRONOUS
200MHz
200 μs
DRAM
Parallel
64MX8
3-STATE
8
0.0046A
536870912 bit
COMMON
2.7V
2.3V
8192
248
248
22.22mm
1.2mm
10.16mm
符合RoHS标准
无铅
-
-
-
-
-
-
-
-
IS43R16160D-5TLI

ISSI, Integrated Silicon Solution Inc

DRAM 256M (16Mx16) 200MHz 2.5v DDR SDRAM

-
表面贴装
66-TSSOP (0.400, 10.16mm Width)
66
Volatile
-
-40°C~85°C TA
Tray
-
活跃
3 (168 Hours)
66
EAR99
-
AUTO/SELF REFRESH
8542.32.00.24
2.5V
DUAL
-
1
0.65mm
-
-
-
256Mb 16M x 16
1
-
200MHz
700ps
DRAM
Parallel
16MX16
3-STATE
16
0.004A
-
COMMON
2.7V
2.3V
8192
248
248
22.22mm
1.2mm
-
ROHS3 Compliant
无铅
8 Weeks
表面贴装
330mA
16b
15ns
15b
256 Mb
无
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集成电路（IC）相关产品

图片	产品型号	品牌	分类	封装	描述	对比
	IS43R16160F-5TLI	ISSI, Integrated Silicon Solution Inc	存储器	66-TSSOP (0.400, 10.16mm Width)	DRAM Chip DDR SDRAM 256M-Bit 16Mx16 2.5V 66-Pin TSOP-II	对比
	IS43R86400D-5TL	ISSI, Integrated Silicon Solution Inc	存储器	66-TSSOP (0.400, 10.16mm Width)	DRAM 512M (64Mx8) 200MHz 2.5v DDR SDRAM	对比