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IPS12CN10LGBKMA1备选型号: IRFU5410PBF

IPS12CN10LGBKMA1

Infineon Technologies

Trans MOSFET N-CH 100V 69A 3-Pin(3 Tab) TO-251 Tube

通孔
通孔
TO-251-3 Stub Leads, IPak
SILICON
69A Tc
-55°C~175°C TJ
Tube
OptiMOS™
2011
e3
yes
Obsolete
1 (Unlimited)
3
EAR99
哑光锡
逻辑级兼容
SINGLE
260
unknown
未说明
3
R-PSIP-T3
不合格
SINGLE WITH BUILT-IN DIODE
增强型MOSFET
125W
N-Channel
SWITCHING
11.8m Ω @ 69A, 10V
2.4V @ 83μA
5600pF @ 50V
58nC @ 10V
100V
±20V
69A
20V
276A
符合RoHS标准
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
IRFU5410PBF

Infineon Technologies

Mosfet, Power; P-ch; Vdss -100V; Rds(on) 0.205 Ohm; Id -13A; I-pak (TO-251AA); Pd 66W

通孔
通孔
TO-251-3 Short Leads, IPak, TO-251AA
SILICON
13A Tc
-55°C~150°C TJ
Tube
HEXFET®
1999
e3
-
活跃
1 (Unlimited)
3
EAR99
Matte Tin (Sn) - with Nickel (Ni) barrier
HIGH RELIABILITY, AVALANCHE RATED, ULTRA-LOW RESISTANCE
-
260
-
30
-
-
-
-
增强型MOSFET
66W
P-Channel
SWITCHING
205m Ω @ 7.8A, 10V
4V @ 250μA
760pF @ 25V
58nC @ 10V
100V
±20V
-13A
20V
52A
ROHS3 Compliant
12 Weeks
3
通孔
-100V
-13A
2.28mm
9.65mm
Single
DRAIN
15 ns
58ns
46 ns
-4V
0.205Ohm
-100V
-100V
-4 V
6.22mm
6.7056mm
2.3876mm
无SVHC
无
无铅
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图片	产品型号	品牌	分类	封装	描述	对比
	IRFU5410PBF	Infineon Technologies	晶体管 - FET，MOSFET - 单个	TO-251-3 Short Leads, IPak, TO-251AA	Mosfet, Power; P-ch; Vdss -100V; Rds(on) 0.205 Ohm; Id -13A; I-pak (TO-251AA); Pd 66W	对比
	IRFU3410PBF	Infineon Technologies	晶体管 - FET，MOSFET - 单个	TO-251-3 Short Leads, IPak, TO-251AA	MOSFET N-CH 100V 31A I-PAK	对比
	FQU13N10LTU	ON Semiconductor	晶体管 - FET，MOSFET - 单个	TO-251-3 Short Leads, IPak, TO-251AA	MOSFET 100V N-Ch QFET Logic Level	对比