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IRF2807STRLPBF备选型号: IRF1010NSTRLPBF

IRF2807STRLPBF

Infineon Technologies

MOSFET N-CH 75V 82A D2PAK

12 Weeks
Tin
表面贴装
表面贴装
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
3
SILICON
82A Tc
-55°C~175°C TJ
Tape & Reel (TR)
HEXFET®
2002
e3
活跃
1 (Unlimited)
2
SMD/SMT
EAR99
AVALANCHE RATED, HIGH RELIABILITY, ULTRA LOW RESISTANCE
75V
鸥翼
260
82A
30
R-PSSO-G2
Single
增强型MOSFET
170W
DRAIN
13 ns
N-Channel
SWITCHING
13m Ω @ 43A, 10V
4V @ 250μA
3820pF @ 25V
160nC @ 10V
64ns
±20V
48 ns
82A
4V
20V
75A
75V
280A
75V
150 ns
4 V
4.826mm
10.668mm
9.65mm
无SVHC
无
ROHS3 Compliant
Contains Lead, Lead Free
-
-
-
IRF1010NSTRLPBF

Infineon Technologies

MOSFET N-CH 55V 85A D2PAK

12 Weeks
-
表面贴装
表面贴装
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
3
SILICON
85A Tc
-55°C~175°C TJ
Tape & Reel (TR)
HEXFET®
2002
e3
活跃
1 (Unlimited)
2
SMD/SMT
EAR99
AVALANCHE RATED, HIGH RELIABILITY, ULTRA LOW RESISTANCE
55V
鸥翼
260
85A
30
R-PSSO-G2
Single
增强型MOSFET
180W
DRAIN
13 ns
N-Channel
SWITCHING
11m Ω @ 43A, 10V
4V @ 250μA
3210pF @ 25V
120nC @ 10V
76ns
±20V
48 ns
85A
4V
20V
75A
55V
290A
55V
100 ns
4 V
4.826mm
10.668mm
9.65mm
无SVHC
无
ROHS3 Compliant
Contains Lead, Lead Free
Matte Tin (Sn) - with Nickel (Ni) barrier
TO-252
250 mJ
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图片	产品型号	品牌	分类	封装	描述	对比
	STB60NF06T4	STMicroelectronics	晶体管 - FET，MOSFET - 单个	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	MOSFET N-Ch 60 Volt 60 Amp	对比
	IRF1010NSTRLPBF	Infineon Technologies	晶体管 - FET，MOSFET - 单个	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	MOSFET N-CH 55V 85A D2PAK	对比