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IRF3808SPBF备选型号: IRF3205STRLPBF

IRF3808SPBF

Infineon Technologies

MOSFET N-CH 75V 106A D2PAK

表面贴装
表面贴装
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
3
SILICON
106A Tc
-55°C~175°C TJ
Tube
HEXFET®
2002
e3
Discontinued
1 (Unlimited)
2
SMD/SMT
EAR99
7MOhm
Matte Tin (Sn) - with Nickel (Ni) barrier
AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE
75V
鸥翼
260
106A
30
R-PSSO-G2
Single
增强型MOSFET
200W
DRAIN
16 ns
N-Channel
SWITCHING
7m Ω @ 82A, 10V
4V @ 250μA
5310pF @ 25V
220nC @ 10V
140ns
±20V
120 ns
93 ns
106A
4V
20V
75A
75V
550A
75V
4 V
4.826mm
10.668mm
9.65mm
无SVHC
无
ROHS3 Compliant
无铅
-
-
-
-
-
-
IRF3205STRLPBF

Infineon Technologies

MOSFET N-CH 55V 110A D2PAK

表面贴装
表面贴装
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
3
SILICON
110A Tc
-55°C~175°C TJ
Tape & Reel (TR)
HEXFET®
2001
e3
活跃
1 (Unlimited)
2
SMD/SMT
EAR99
8MOhm
Matte Tin (Sn) - with Nickel (Ni) barrier
AVALANCHE RATED, HIGH RELIABILITY, ULTRA LOW RESISTANCE
55V
鸥翼
260
110A
30
R-PSSO-G2
Single
增强型MOSFET
200W
DRAIN
14 ns
N-Channel
SWITCHING
8m Ω @ 62A, 10V
4V @ 250μA
3247pF @ 25V
146nC @ 10V
101ns
±20V
65 ns
-
110A
4V
20V
75A
55V
-
55V
4 V
5.084mm
10.668mm
10.54mm
无SVHC
无
ROHS3 Compliant
Contains Lead, Lead Free
12 Weeks
1
TO-252
264 mJ
104 ns
175°C
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分立半导体产品相关产品

图片	产品型号	品牌	分类	封装	描述	对比
	IRF3205STRLPBF	Infineon Technologies	晶体管 - FET，MOSFET - 单个	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	MOSFET N-CH 55V 110A D2PAK	对比
	IRF1407STRLPBF	Infineon Technologies	晶体管 - FET，MOSFET - 单个	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Single N-Channel 75 V 0.0078 Ohm 250 nC HEXFET® Power Mosfet - D2PAK	对比