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IRF530NSTRLPBF备选型号: IRF9530NSTRLPBF

IRF530NSTRLPBF

Infineon Technologies

MOSFET N-CH 100V 17A D2PAK

12 Weeks
Tin
表面贴装
表面贴装
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
3
SILICON
17A Tc
-55°C~175°C TJ
Tape & Reel (TR)
HEXFET®
2004
e3
活跃
1 (Unlimited)
2
SMD/SMT
EAR99
90MOhm
AVALANCHE RATED, HIGH RELIABILITY
100V
鸥翼
260
17A
30
R-PSSO-G2
1
Single
增强型MOSFET
3.8W
DRAIN
9.2 ns
N-Channel
SWITCHING
90m Ω @ 9A, 10V
4V @ 250μA
920pF @ 25V
37nC @ 10V
22ns
±20V
25 ns
17A
4V
20V
100V
60A
100V
140 ns
175°C
4 V
5.084mm
10.668mm
9.65mm
无SVHC
无
ROHS3 Compliant
Contains Lead, Lead Free
-
IRF9530NSTRLPBF

Infineon Technologies

MOSFET P-CH 100V 14A D2PAK

12 Weeks
Tin
表面贴装
表面贴装
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
3
SILICON
14A Tc
-55°C~175°C TJ
Tape & Reel (TR)
HEXFET®
1998
e3
活跃
1 (Unlimited)
2
-
EAR99
200mOhm
AVALANCHE RATED, HIGH RELIABILITY
-100V
鸥翼
260
-14A
30
R-PSSO-G2
1
Single
增强型MOSFET
3.8W
DRAIN
15 ns
P-Channel
SWITCHING
200m Ω @ 8.4A, 10V
4V @ 250μA
760pF @ 25V
58nC @ 10V
58ns
±20V
46 ns
-14A
-4V
20V
-100V
56A
100V
190 ns
175°C
-4 V
5.084mm
10.668mm
9.65mm
无SVHC
无
ROHS3 Compliant
Contains Lead, Lead Free
250 mJ
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分立半导体产品相关产品

图片	产品型号	品牌	分类	封装	描述	对比
	IRL530NSTRLPBF	Infineon Technologies	晶体管 - FET，MOSFET - 单个	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	MOSFET N-CH 100V 17A D2PAK	对比
	NTB13N10G	ON Semiconductor	晶体管 - FET，MOSFET - 单个	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	MOSFET N-CH 100V 13A D2PAK	对比