登录 / 注册

产品

输入型号/关键词

IRF6668TRPBF备选型号: FDB13AN06A0

IRF6668TRPBF

Infineon Technologies

Transistor: N-MOSFET; unipolar; 80V; 55A; 89W; DirectFE

12 Weeks
表面贴装
表面贴装
DirectFET™ Isometric MZ
3
SILICON
55A Tc
-40°C~150°C TJ
Tape & Reel (TR)
HEXFET®
2006
e1
活跃
1 (Unlimited)
3
EAR99
Tin/Silver/Copper (Sn/Ag/Cu)
80V
BOTTOM
55A
Single
增强型MOSFET
89W
DRAIN
19 ns
N-Channel
SWITCHING
15m Ω @ 12A, 10V
4.9V @ 100μA
1320pF @ 25V
31nC @ 10V
13ns
±20V
23 ns
55mA
4V
20V
0.015Ohm
80V
170A
24 mJ
533.4μm
6.35mm
5.0546mm
无SVHC
无
ROHS3 Compliant
无铅
-
-
-
-
-
-
-
-
-
-
-
-
-
-
FDB13AN06A0

ON Semiconductor

Trans MOSFET N-CH 60V 10.9A 3-Pin(2 Tab) D2PAK T/R

8 Weeks
表面贴装
表面贴装
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
3
SILICON
10.9A Ta 62A Tc
-55°C~175°C TJ
Tape & Reel (TR)
PowerTrench®
2003
e3
活跃
1 (Unlimited)
2
EAR99
-
60V
-
62A
Single
增强型MOSFET
115W
DRAIN
9 ns
N-Channel
SWITCHING
13.5m Ω @ 62A, 10V
4V @ 250μA
1350pF @ 25V
29nC @ 10V
96ns
±20V
26 ns
62A
4V
20V
-
60V
-
56 mJ
4.83mm
10.67mm
11.33mm
无SVHC
-
ROHS3 Compliant
无铅
ACTIVE (Last Updated: 4 days ago)
Tin
1.31247g
yes
SMD/SMT
13.5MOhm
鸥翼
未说明
not_compliant
未说明
R-PSSO-G2
不合格
60V
4 V
添加型号

分立半导体产品相关产品

图片	产品型号	品牌	分类	封装	描述	对比
	FDB13AN06A0	ON Semiconductor	晶体管 - FET，MOSFET - 单个	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Trans MOSFET N-CH 60V 10.9A 3-Pin(2 Tab) D2PAK T/R	对比
	IRFH5110TRPBF	Infineon Technologies	晶体管 - FET，MOSFET - 单个	8-PowerVDFN	Single N-Channel 100 V 12.4 mOhm 48 nC HEXFET® Power Mosfet - PQFN 5 x 6 mm	对比
	IRFZ44VZSPBF	Infineon Technologies	晶体管 - FET，MOSFET - 单个	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	MOSFET N-CH 60V 57A D2PAK	对比