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MOSFET 2P-CH 20V 5.3A 8-SOIC
12 Weeks
Tin
表面贴装
表面贴装
8-SOIC (0.154, 3.90mm Width)
8
SILICON
5.3A
-55°C~150°C TJ
Tape & Reel (TR)
HEXFET®
1997
e3
活跃
1 (Unlimited)
8
EAR99
58mOhm
雪崩 额定
-20V
2W
鸥翼
260
-5.3A
30
IRF7314PBF
6.3 mm
Dual
增强型MOSFET
2W
15 ns
2 P-Channel (Dual)
SWITCHING
58m Ω @ 2.9A, 4.5V
700mV @ 250μA
780pF @ 15V
29nC @ 4.5V
40ns
20V
49 ns
-5.3A
-700mV
12V
-20V
150 mJ
METAL-OXIDE SEMICONDUCTOR
71 ns
逻辑电平门
-700 mV
1.4986mm
4.9784mm
3.9878mm
无SVHC
无
ROHS3 Compliant
无铅
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MOSFET 2N-CH 20V 5.2A 8-SOIC
12 Weeks
-
表面贴装
表面贴装
8-SOIC (0.154, 3.90mm Width)
8
SILICON
2
-55°C~150°C TJ
Tape & Reel (TR)
HEXFET®
1997
-
活跃
1 (Unlimited)
8
EAR99
50mOhm
超低电阻
20V
2W
鸥翼
-
5.2A
-
IRF7301PBF
6.3 mm
Dual
增强型MOSFET
2W
9 ns
2 N-Channel (Dual)
SWITCHING
50m Ω @ 2.6A, 4.5V
700mV @ 250μA
660pF @ 15V
20nC @ 4.5V
42ns
-
51 ns
5.2A
700mV
12V
20V
-
METAL-OXIDE SEMICONDUCTOR
44 ns
逻辑电平门
700 mV
1.4986mm
4.9784mm
3.9878mm
无SVHC
无
ROHS3 Compliant
Contains Lead, Lead Free
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