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MOSFET 2P-CH 30V 8A 8-SOIC
12 Weeks
Tin
表面贴装
表面贴装
8-SOIC (0.154, 3.90mm Width)
8
SILICON
8A
-55°C~150°C TJ
Tape & Reel (TR)
HEXFET®
2004
e3
活跃
1 (Unlimited)
8
SMD/SMT
EAR99
21MOhm
超低电阻
-30V
2W
鸥翼
-8A
IRF7328PBF
6.3 mm
2
Dual
增强型MOSFET
2W
13 ns
2 P-Channel (Dual)
SWITCHING
21m Ω @ 8A, 10V
2.5V @ 250μA
2675pF @ 25V
78nC @ 10V
15ns
30V
98 ns
-8A
-1V
20V
8A
-30V
-30V
METAL-OXIDE SEMICONDUCTOR
56 ns
150°C
逻辑电平门
-2.5 V
1.75mm
4.9784mm
3.9878mm
无SVHC
无
ROHS3 Compliant
无铅
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-
-
-
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MOSFET 2P-CH 30V 9.2A 8SOIC
12 Weeks
-
表面贴装
表面贴装
8-SOIC (0.154, 3.90mm Width)
8
SILICON
2
-55°C~150°C TJ
Tape & Reel (TR)
HEXFET®
2008
e3
活跃
1 (Unlimited)
8
-
EAR99
-
-
-
2W
鸥翼
-
IRF9358PBF
-
-
Dual
增强型MOSFET
2W
5.7 ns
2 P-Channel (Dual)
SWITCHING
16.3m Ω @ 9.2A, 10V
2.4V @ 25μA
1740pF @ 25V
38nC @ 10V
7.2ns
30V
69 ns
9.2A
-1.8V
20V
-
-30V
-
METAL-OXIDE SEMICONDUCTOR
-
-
逻辑电平门
-1.8 V
1.5mm
5mm
4mm
无SVHC
无
ROHS3 Compliant
无铅
Matte Tin (Sn)
MS-012AA
0.0163Ohm
73A
210 mJ
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