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IRFHS9301TRPBF备选型号: IRFHS8342TRPBF

IRFHS9301TRPBF

Infineon Technologies

INFINEON IRFHS9301TRPBF MOSFET Transistor, P Channel, -13 A, -30 V, 0.03 ohm, -10 V, -1.8 VNew

12 Weeks
表面贴装
表面贴装
6-PowerVDFN
6
SILICON
6A Ta 13A Tc
-55°C~150°C TJ
Tape & Reel (TR)
HEXFET®
2010
活跃
1 (Unlimited)
6
EAR99
37MOhm
DUAL
Single
增强型MOSFET
2.1W
DRAIN
12 ns
P-Channel
SWITCHING
37m Ω @ 7.8A, 10V
2.4V @ 25μA
580pF @ 25V
13nC @ 10V
80ns
30V
±20V
25 ns
6A
-1.8V
20V
6A
-30V
52A
-1.8 V
950μm
2.1mm
2.1mm
无SVHC
无
ROHS3 Compliant
无铅
-
-
-
IRFHS8342TRPBF

Infineon Technologies

INFINEON IRFHS8342TRPBF MOSFET Transistor, N Channel, 8.8 A, 30 V, 0.013 ohm, 10 V, 1.8 VNew

12 Weeks
表面贴装
表面贴装
6-PowerVDFN
6
SILICON
8.8A Ta 19A Tc
-55°C~150°C TJ
Tape & Reel (TR)
HEXFET®
2010
活跃
1 (Unlimited)
6
EAR99
16MOhm
DUAL
-
增强型MOSFET
2.1W
DRAIN
5.9 ns
N-Channel
SWITCHING
16m Ω @ 8.5A, 10V
2.35V @ 25μA
600pF @ 25V
8.7nC @ 10V
15ns
-
±20V
5 ns
8.8A
1.8V
20V
8.5A
30V
-
1.8 V
-
-
-
无SVHC
无
ROHS3 Compliant
无铅
e3
Matte Tin (Sn)
SINGLE WITH BUILT-IN DIODE
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图片	产品型号	品牌	分类	封装	描述	对比
	IRFHS8342TRPBF	Infineon Technologies	晶体管 - FET，MOSFET - 单个	6-PowerVDFN	INFINEON IRFHS8342TRPBF MOSFET Transistor, N Channel, 8.8 A, 30 V, 0.013 ohm, 10 V, 1.8 VNew	对比
	IRFHS9351TRPBF	Infineon Technologies	晶体管 - FET，MOSFET - 阵列	6-VQFN Exposed Pad	INFINEON IRFHS9351TRPBF Dual MOSFET, Dual P Channel, -5.1 A, -30 V, 0.135 ohm, -10 V, -1.8 VNew	对比
	IRFHS8242TRPBF	Infineon Technologies	晶体管 - FET，MOSFET - 单个	6-PowerVDFN	MOSFET N-CH 25V 9.9A PQFN	对比