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IRL2910STRLPBF备选型号: IRF3710STRLPBF

IRL2910STRLPBF

Infineon Technologies

MOSFET N-CH 100V 55A D2PAK

12 Weeks
表面贴装
表面贴装
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
3
SILICON
55A Tc
-55°C~175°C TJ
Tape & Reel (TR)
HEXFET®
2004
e3
活跃
1 (Unlimited)
2
SMD/SMT
EAR99
26mOhm
Matte Tin (Sn) - with Nickel (Ni) barrier
LOGIC LEVEL COMPATIBLE, HIGH RELIABILITY, AVALANCHE RATED
100V
鸥翼
260
55A
30
R-PSSO-G2
Single
增强型MOSFET
200W
DRAIN
11 ns
N-Channel
SWITCHING
26m Ω @ 29A, 10V
2V @ 250μA
3700pF @ 25V
140nC @ 5V
100ns
±16V
55 ns
55A
2V
16V
100V
100V
520 mJ
350 ns
2 V
4.826mm
10.668mm
9.65mm
无SVHC
无
ROHS3 Compliant
无铅
IRF3710STRLPBF

Infineon Technologies

MOSFET N-CH 100V 57A D2PAK

12 Weeks
表面贴装
表面贴装
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
3
SILICON
57A Tc
-55°C~175°C TJ
Tape & Reel (TR)
HEXFET®
2009
e3
活跃
1 (Unlimited)
2
SMD/SMT
EAR99
23MOhm
Matte Tin (Sn) - with Nickel (Ni) barrier
AVALANCHE RATED, HIGH RELIABILITY, ULTRA LOW RESISTANCE
100V
鸥翼
260
57A
30
R-PSSO-G2
Single
增强型MOSFET
200W
DRAIN
12 ns
N-Channel
SWITCHING
23m Ω @ 28A, 10V
4V @ 250μA
3130pF @ 25V
130nC @ 10V
58ns
±20V
47 ns
57A
4V
20V
100V
100V
280 mJ
220 ns
4 V
4.826mm
10.668mm
9.65mm
无SVHC
无
ROHS3 Compliant
Contains Lead, Lead Free
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图片	产品型号	品牌	分类	封装	描述	对比
	HUF75639S3S	ON Semiconductor	晶体管 - FET，MOSFET - 单个	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	MOSFET N-CH 100V 56A D2PAK	对比