MOSFET N-CH 55V 75A D2PAK
12 Weeks
表面贴装
表面贴装
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
3
SILICON
75A Tc
-55°C~175°C TJ
Tape & Reel (TR)
HEXFET®
2010
e3
活跃
1 (Unlimited)
2
EAR99
8MOhm
Matte Tin (Sn) - with Nickel (Ni) barrier
AVALANCHE RATED, HIGH RELIABILITY, LOGIC LEVEL COMPATIBLE, ULTRA-LOW RESISTANCE
鸥翼
260
30
R-PSSO-G2
Single
增强型MOSFET
130W
DRAIN
17 ns
N-Channel
SWITCHING
8m Ω @ 52A, 10V
3V @ 250μA
2880pF @ 25V
60nC @ 5V
240ns
±16V
83 ns
86A
16V
75A
55V
4.699mm
10.668mm
9.65mm
无
ROHS3 Compliant
无铅
-
-
-
MOSFET N-CH 55V 75A D2PAK
12 Weeks
表面贴装
表面贴装
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
3
SILICON
75A Tc
-55°C~175°C TJ
Tape & Reel (TR)
HEXFET®
2001
e3
活跃
1 (Unlimited)
2
EAR99
-
Matte Tin (Sn) - with Nickel (Ni) barrier
AVALANCHE RATED, HIGH RELIABILITY, ULTRA LOW RESISTANCE
鸥翼
260
30
R-PSSO-G2
-
增强型MOSFET
140W
DRAIN
18 ns
N-Channel
SWITCHING
7.5m Ω @ 75A, 10V
4V @ 250μA
2840pF @ 25V
95nC @ 10V
150ns
±20V
92 ns
75A
20V
-
55V
4.826mm
10.668mm
9.65mm
无
ROHS3 Compliant
无铅
SINGLE
SINGLE WITH BUILT-IN DIODE
0.0075Ohm