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IRLR3103TRPBF备选型号: IRLR3103PBF

IRLR3103TRPBF

Infineon Technologies

MOSFET N-CH 30V 55A DPAK

12 Weeks
表面贴装
表面贴装
TO-252-3, DPak (2 Leads + Tab), SC-63
3
SILICON
55A Tc
1998
-55°C~175°C TJ
Tape & Reel (TR)
HEXFET®
e3
不用于新设计
1 (Unlimited)
2
EAR99
19mOhm
Matte Tin (Sn) - with Nickel (Ni) barrier
LOGIC LEVEL COMPATIBLE, AVALANCHE RATED
30V
鸥翼
260
52A
30
R-PSSO-G2
Single
增强型MOSFET
69W
DRAIN
9 ns
N-Channel
SWITCHING
19m Ω @ 33A, 10V
1V @ 250μA
1600pF @ 25V
50nC @ 4.5V
210ns
±16V
54 ns
46A
1V
TO-252AA
16V
20A
30V
220A
240 mJ
2.3876mm
6.7056mm
6.22mm
无SVHC
无
ROHS3 Compliant
Contains Lead, Lead Free
-
-
-
IRLR3103PBF

Infineon Technologies

MOSFET N-CH 30V 55A DPAK

-
表面贴装
表面贴装
TO-252-3, DPak (2 Leads + Tab), SC-63
3
SILICON
55A Tc
1998
-55°C~175°C TJ
Tube
HEXFET®
e3
Discontinued
1 (Unlimited)
2
EAR99
19mOhm
Matte Tin (Sn) - with Nickel (Ni) barrier
LOGIC LEVEL COMPATIBLE, AVALANCHE RATED
30V
鸥翼
260
55A
30
R-PSSO-G2
Single
增强型MOSFET
69W
DRAIN
9 ns
N-Channel
SWITCHING
19m Ω @ 33A, 10V
1V @ 250μA
1600pF @ 25V
50nC @ 4.5V
210ns
±16V
54 ns
55A
-
TO-252AA
16V
20A
30V
220A
240 mJ
2.3876mm
6.7056mm
6.22mm
无SVHC
-
ROHS3 Compliant
无铅
不合格
78 ns
1 V
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图片	产品型号	品牌	分类	封装	描述	对比
	IRLR3103PBF	Infineon Technologies	晶体管 - FET，MOSFET - 单个	TO-252-3, DPak (2 Leads + Tab), SC-63	MOSFET N-CH 30V 55A DPAK	对比