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IRLS4030TRLPBF备选型号: FDB035N10A

IRLS4030TRLPBF

Infineon Technologies

MOSFET N-CH 100V 180A D2PAK

12 Weeks
表面贴装
表面贴装
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
3
SILICON
180A Tc
-55°C~175°C TJ
Tape & Reel (TR)
HEXFET®
2009
e3
活跃
1 (Unlimited)
2
EAR99
3.9MOhm
Matte Tin (Sn) - with Nickel (Ni) barrier
鸥翼
R-PSSO-G2
Single
增强型MOSFET
370W
74 ns
N-Channel
SWITCHING
4.3m Ω @ 110A, 10V
2.5V @ 250μA
11360pF @ 50V
130nC @ 4.5V
330ns
±16V
170 ns
180A
16V
100V
2.5 V
4.572mm
10.668mm
9.65mm
Unknown
无
ROHS3 Compliant
无铅
-
-
-
-
-
-
-
FDB035N10A

ON Semiconductor

N CH MOSFET, POWERTRENCH, 100V, 120A, D2PAK - More Details

8 Weeks
表面贴装
表面贴装
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
3
SILICON
120A Tc
-55°C~175°C TJ
Tape & Reel (TR)
PowerTrench®
2013
e3
活跃
1 (Unlimited)
2
EAR99
3.5MOhm
Tin (Sn)
鸥翼
R-PSSO-G2
Single
增强型MOSFET
333W
22 ns
N-Channel
SWITCHING
3.5m Ω @ 75A, 10V
4V @ 250μA
7295pF @ 25V
116nC @ 10V
54ns
±20V
11 ns
214A
20V
100V
-
4.83mm
10.67mm
9.65mm
-
无
ROHS3 Compliant
无铅
ACTIVE (Last Updated: 4 days ago)
1.31247g
yes
ULTRA-LOW RESISTANCE
DRAIN
704A
558 mJ
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分立半导体产品相关产品

图片	产品型号	品牌	分类	封装	描述	对比
	FDB035N10A	ON Semiconductor	晶体管 - FET，MOSFET - 单个	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	N CH MOSFET, POWERTRENCH, 100V, 120A, D2PAK - More Details	对比
	IRLS4030PBF	Infineon Technologies	晶体管 - FET，MOSFET - 单个	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	MOSFET N-CH 100V 180A D2PAK	对比