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IS42S16100E-7TLI备选型号: AS4C1M16S-7TCNTR

IS42S16100E-7TLI

ISSI, Integrated Silicon Solution Inc

IC DRAM 16M PARALLEL 50TSOP II

Tin
表面贴装
表面贴装
50-TSOP (0.400, 10.16mm Width)
50
Volatile
-40°C~85°C TA
Tray
e3
yes
Obsolete
3 (168 Hours)
50
EAR99
AUTO/SELF REFRESH
8542.32.00.02
3V~3.6V
DUAL
260
1
3.3V
0.8mm
40
50
3.3V
3.6V
3V
16Mb 1M x 16
1
150mA
150mA
143MHz
5.5ns
DRAM
Parallel
16b
1MX16
3-STATE
12b
16 Mb
0.004A
COMMON
2048
1.05mm
21.08mm
10.29mm
无
符合RoHS标准
-
-
-
-
-
-
-
-
-
AS4C1M16S-7TCNTR

Alliance Memory, Inc.

DRAM 16Mb, 3.3V, 143Mhz 1M x 16 SDRAM

-
-
表面贴装
50-TSOP (0.400, 10.16mm Width)
50
Volatile
0°C~70°C TA
Tape & Reel (TR)
e3/e6
yes
活跃
3 (168 Hours)
50
EAR99
AUTO/SELF REFRESH
8542.32.00.02
3V~3.6V
DUAL
260
1
3.3V
0.8mm
40
50
-
3.6V
3V
16Mb 1M x 16
1
-
-
143MHz
5.4ns
DRAM
Parallel
16b
1MX16
-
-
-
-
-
-
-
20.95mm
-
-
ROHS3 Compliant
8 Weeks
YES
2015
PURE MATTE TIN/TIN BISMUTH
SYNCHRONOUS
16
2ns
1.2mm
无铅
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集成电路（IC）相关产品

图片	产品型号	品牌	分类	封装	描述	对比
	AS4C1M16S-7TCNTR	Alliance Memory, Inc.	存储器	50-TSOP (0.400, 10.16mm Width)	DRAM 16Mb, 3.3V, 143Mhz 1M x 16 SDRAM	对比
	IS42S16400J-7TLI	ISSI, Integrated Silicon Solution Inc	存储器	54-TSOP (0.400, 10.16mm Width)	IC DRAM 64M PARALLEL 54TSOP	对比
	IS42S16160G-7TLI	ISSI, Integrated Silicon Solution Inc	存储器	54-TSOP (0.400, 10.16mm Width)	Memory; SDRAM; 4Mx16bitx4; 143MHz; 7ns; TSOP54 II; -40÷85°C; 3.3VDC	对比